A multi-layered nano piezoelectric device and its preparation method

A piezoelectric device and nanotechnology, applied in the field of multi-layered nano piezoelectric devices and their preparation, can solve the problems of low power production efficiency, unstable quality, expensive price, etc., and achieve stable current output and strong power The effect of high chemical performance and mechanical strength

Active Publication Date: 2019-08-23
JIANGSU UNIV OF SCI & TECH
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Problems solved by technology

The disadvantage of this patent is that the pulse current is generated, which is not stable, and the apparent d 33 also smaller
Piezoelectric materials also have the following problems: 1. There are few types of piezoelectric materials, most of which are ceramic piezoelectric materials, which are fragile and unstable in quality; 2. They are greatly affected by the vibration frequency, the power production efficiency is not high, and the price is expensive, etc.

Method used

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  • A multi-layered nano piezoelectric device and its preparation method

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Embodiment Construction

[0023] In order to make the purpose, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0024] as attached figure 1 As shown, it is a multi-layered nano piezoelectric device of the present invention, which is a rectangular structure formed by stacking five layers, and the order is gallium nitride-polystyrene matrix layer I1, n-type silver-doped zinc oxide nanometer Five layers of line array layer I2, nitrogen-doped graphene layer 3, n-type silver-doped zinc oxide nanowire array layer II4 and gallium nitride-polystyrene matrix layer II5 are laminated; One side of vinyl matrix layer I1 is connected with indium tin oxide electrode I6, one side of nitrogen-doped graphene layer 3 is c...

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Abstract

The invention discloses a multi-layered nano piezoelectric device, which is a rectangular structure formed by stacking at least five layers, which are gallium nitride-polystyrene matrix layer I and n-type silver-doped zinc oxide nanowire array layer in sequence. Ⅰ. Five-layer lamination of nitrogen-doped graphene layer, n-type silver-doped zinc oxide nanowire array layer II and gallium nitride-polystyrene matrix layer II; in the gallium nitride-polystyrene matrix layer Ⅰ One side of the nitrogen-doped graphene layer is connected to an indium tin oxide electrode I, one side of the nitrogen-doped graphene layer is connected to a graphite electrode, and one side of the gallium nitride-polystyrene matrix layer II is connected to an indium tin oxide electrode II. The piezoelectric device of the present invention has relatively high current and voltage, is small in size, can be used in series and parallel and can realize stable output, can be widely used in daily life, and is a passive and environment-friendly piezoelectric device. The invention also discloses a preparation method of a multi-stacked nanometer piezoelectric device.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric devices, and relates to a multi-layer nano piezoelectric device and a preparation method thereof. Background technique [0002] Energy and environmental protection are the most concerned issues in today's society. As an environmentally friendly functional material that can convert mechanical energy to electrical energy, piezoelectric materials are playing an increasingly important role in the field of high-tech industrial production. With the development of science and technology, the application of ultra-large-scale integrated circuits, the miniaturization and portability of electronic devices are becoming a development trend, and the matching smaller batteries and generators are getting more and more attention. The nano-piezoelectric material has the advantages of simple engineering installation, wide application range, environmental protection, etc., and is becoming a research hotspot. P...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/083H01L41/18H01L41/277B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10N30/50H10N30/852H10N30/057
Inventor 刘科汲盛建国顾香玉余文达张子鑫马瑜鸿盛清风汤继俊蔡星伟陈亚玲郭永春
Owner JIANGSU UNIV OF SCI & TECH
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