Single-sided quartz fin line double diode terahertz balanced type frequency doubling circuit

A dual-diode, secondary frequency multiplication technology, applied to electrical components, power oscillators, etc., can solve the problems of small number of junctions and inability to withstand high power, and achieve the effect of simple processing, not easy to burn out, and high reliability

Pending Publication Date: 2017-09-19
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, a multi-junction Schottky diode is used in a general frequency multipl

Method used

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  • Single-sided quartz fin line double diode terahertz balanced type frequency doubling circuit
  • Single-sided quartz fin line double diode terahertz balanced type frequency doubling circuit
  • Single-sided quartz fin line double diode terahertz balanced type frequency doubling circuit

Examples

Experimental program
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Effect test

Embodiment 1

[0024] Such as figure 1 As shown, the embodiment of the present invention discloses a single-sided quartz fin line double diode terahertz balanced secondary frequency multiplication circuit, including a quartz substrate fin line circuit 1, two GaAs-based terahertz Schottky diodes in reverse series 2. RF input waveguide 3 and RF output waveguide 4 . Such as image 3 As shown, the quartz substrate fin circuit 1 includes a quartz circuit substrate 11 and first to second input fin lines 12 , 13 and first to second output fin lines 14 , 15 located on the quartz circuit substrate 11 . One end of the first input fin line 12 is connected to one end of the first output fin line 14 to form a front side fin line, and one end of the second input fin line 13 is connected to one end of the second output fin line 15 The rear forms the posterior fin line. A certain distance is maintained between the front fin line and the rear fin line, and the distance between the two first gradually decr...

Embodiment 2

[0028] Such as figure 2 As shown, the embodiment of the present invention discloses a single-sided quartz fin line double diode terahertz balanced secondary frequency multiplication circuit, including a quartz substrate fin line circuit 1, two GaAs-based terahertz Schottky diodes in reverse series 2. The radio frequency input waveguide 3, the radio frequency output waveguide 4 and the quartz matching adjustment medium block 5. Such as image 3 As shown, the quartz substrate fin circuit 1 includes a quartz circuit substrate 11 and first to second input fin lines 12 , 13 and first to second output fin lines 14 , 15 located on the quartz circuit substrate 11 . One end of the first input fin line 12 is connected to one end of the first output fin line 14 to form a front side fin line, and one end of the second input fin line 13 is connected to one end of the second output fin line 15 After that, the rear fin line is formed, and a certain interval is maintained between the front...

Embodiment 3

[0033] Such as figure 2 As shown, the embodiment of the present invention discloses a single-sided quartz fin line double diode terahertz balanced secondary frequency multiplication circuit, including a quartz substrate fin line circuit 1, two GaAs-based terahertz Schottky diodes in reverse series 2. The radio frequency input waveguide 3, the radio frequency output waveguide 4 and the quartz matching adjustment medium block 5. Such as image 3 As shown, the quartz substrate fin circuit 1 includes a quartz circuit substrate 11 and first to second input fin lines 12 , 13 and first to second output fin lines 14 , 15 located on the quartz circuit substrate 11 . One end of the first input fin line 12 is connected to one end of the first output fin line 14 to form a front side fin line, and one end of the second input fin line 13 is connected to one end of the second output fin line 15 After that, the rear fin line is formed, and a certain interval is maintained between the front...

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Abstract

The invention discloses a single-sided quartz fin line double diode terahertz balanced type frequency doubling circuit, and relates to the technical field of a frequency multiplying conversion circuit. The circuit includes a quartz substrate fin line circuit, two GaAs-based terahertz Schottky diodes reversely connected in series, a radio frequency input waveguide and a radio frequency output waveguide. The quartz substrate fin line circuit includes a quartz circuit substrate and front and back side fin lines located on the quartz circuit substrate. The two Schottky diodes are electrically connected with the front side fin line at one end and with the back side fin line at the other end. The Schottky diodes are located at the position where the distance between the front and back side fin lines remains unchanged. The circuit allows the radio frequency input and output waveguides to be one the same straight line to facilitate the design of the circuit personnel, meanwhile, the processing becomes easier, high power input can be withstood, and the output power is increased.

Description

technical field [0001] The invention relates to the technical field of multiple frequency multiplication conversion circuits, in particular to a single-sided quartz fin line double diode terahertz balanced double frequency multiplication circuit. Background technique [0002] In a broad sense, terahertz (THz) waves refer to electromagnetic waves with frequencies in the range of 0.1-10THz, where 1THz=1000GHz, and some people think that THz frequencies refer to electromagnetic waves in the range of 0.3THz-3THz. THz waves occupy a very special position in the electromagnetic spectrum, and THz technology is recognized as a very important cross-frontier field by the international scientific and technological community. [0003] It is an effective way to expand the terahertz frequency source based on solid-state electronic technology. At present, there are mainly two types of circuits used for terahertz frequency multiplication: balanced and unbalanced. During the development of...

Claims

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Application Information

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IPC IPC(8): H03B19/16
CPCH03B19/16
Inventor 王俊龙冯志红房玉龙杨大宝梁士雄张立森赵向阳徐鹏邢东
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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