Chemical mechanical polishing method, equipment and cleaning solution

Abstract

The invention discloses a chemical mechanical grinding method. The chemical mechanical grinding method comprises the steps that grinding is carried out, an acid grinding solution is introduced onto a wafer surface, the acid grinding solution comprises grinding particles of which the solid content is smaller than 2.5 wt%, the wafer surface has negative charge during the chemical mechanical grinding process, the acid grinding solution enables the grinding particles to have positive charge in a specific pH value range, and mutual attraction is achieved; first cleaning is carried out, the wafer surface is cleaned through a negative ion surfactant, peripheral charge of the grinding particles remaining on the wafer surface is changed into negative charge, the wafer surface maintains negative charge, and the specific pH value range is that the pH value including the end value is smaller than 6; and the remaining grinding particles are effectively removed, scratch rate of the wafer surface is decreased, and product yield is increased. The invention further discloses a chemical mechanical grinding device, and a cleaning solution utilized in the chemical mechanical grinding method. The chemical mechanical grinding device has the effects.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical grinding, and in particular relates to a chemical mechanical grinding method, a chemical mechanical grinding device and a cleaning liquid used in the chemical mechanical grinding method. Background technique [0002] At present, CMP (Chemical Mechanical Polishing, chemical mechanical polishing) is applied to the polishing of wafers. It is a chemical mechanical planarization technology with chemical mechanical polishing machine as the main body, integrating online detection, end point detection, cleaning, drying and other technologies. With the continuous miniaturization of the processing size of semiconductor devices and the increase of intermetallic dielectrics for metal interconnection, it will inevitably lead to serious unevenness of the wafer surface. Therefore, the importance of the CMP process has become increasingly prominent. [0003] In chemical mechanical polishing, the polis...

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[0004] Usually use 9

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