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Insulated gate power semiconductor device and method for manufacturing such a device

A technology of power semiconductors and insulated gates, which is applied in the field of power electronics to achieve the effect of improving device reliability and reducing risks

Active Publication Date: 2017-10-13
HITACHI ENERGY LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the weakness of avalanche generation at the enhancement / channel interface exists with increasing N D,enh In the existing installation 4

Method used

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  • Insulated gate power semiconductor device and method for manufacturing such a device
  • Insulated gate power semiconductor device and method for manufacturing such a device
  • Insulated gate power semiconductor device and method for manufacturing such a device

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Embodiment Construction

[0052] figure 2 , An inventive insulated gate power semiconductor device in the form of an insulated gate bipolar transistor 1 is shown, which includes an emitter electrode 2 on the emitter side 22 and a collector electrode 25 on the collector side 27, the collector side 27 is arranged opposite to the emitter side 22. The (n-) doped drift layer 5 is arranged between the emitter side 22 and the collector side 27. The p-doped base layer 4 is arranged between the drift layer 5 and the emitter side 22. The base layer 4 contacts the emitter electrode 2. At least one n-doped source layer 3 is arranged on the emitter side 22. The source layer 3 (which is separated from the drift layer 5 by the base layer 4) contacts the emitter electrode 2. The source layer 3 may be arranged such that the source layer 3 is arranged at both sides of each gate electrode 7.

[0053] The device includes: at least one trench gate electrode 7 having a conductive gate layer 70; and a first electrically in...

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Abstract

An insulated gate power semiconductor device (1) has an (n-) doped drift layer (5) between an emitter side (22) and a collector side (27). A trench gate electrode (7) has a trench bottom (76) and trench lateral sides (75) and extends to a trench depth (77). A p doped first protection pillow (8) covers the trench bottom (76). An n doped second protection pillow (9) encircles the trench gate electrode (7) at its trench lateral sides (75). The second protection pillow (9) has a maximum doping concentration in a first depth (90), which is at least half the trench depth (77), wherein a doping concentration of the second protection pillow decreases towards the emitter side (22) from the maximum doping concentration to a value of not more than half the maximum doping concentration. An n doped enhancement layer (95) has a maximum doping concentration in a second depth (97), which is lower than the first depth (90), wherein the doping concentration has a local doping concentration minimum between the second depth (97) and the first depth (90).

Description

Technical field [0001] The present invention relates to the field of power electronics, and more specifically to a method for manufacturing an insulated gate power semiconductor device according to independent claim 1 or to a device also according to the introduction of independent claim 8. Background technique [0002] figure 1 A prior art insulated gate bipolar transistor (IGBT) as known from EP 0795911 A2 is shown. The prior art device includes an active cell in which layers of different conductivity types are located between the emitter electrode 2 on the emitter side 22 and the collector electrode 25 on the collector side 27 opposite to the emitter side 22 in the following order: (n+) doped source layer 3, p-doped base layer 4 (which contacts emitter electrode 25), n-doped enhancement layer 95, (n-) doped drift layer 5, (n+) doped buffer layer 55 and p-doped collector layer 6. [0003] The trench gate electrode 7 is arranged on the emitter side 22, which includes a gate laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/225H01L29/06H01L29/08H01L29/66H01L29/739
CPCH01L21/2253H01L29/0623H01L29/0834H01L29/66348H01L29/7397
Inventor L.德-米奇伊里斯C.科瓦斯塞
Owner HITACHI ENERGY LTD
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