A kind of power module and its manufacturing method

A manufacturing method and power module technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of high difficulty in application development and low integration of power modules, and achieve topology and function Strong denaturation, efficient and fast power interconnection, and the effect of improving electrical performance

Active Publication Date: 2019-07-02
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a power module and its manufacturing method to solve the technical problems of low integration of traditional power modules and high difficulty in application development

Method used

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  • A kind of power module and its manufacturing method
  • A kind of power module and its manufacturing method
  • A kind of power module and its manufacturing method

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Embodiment Construction

[0054] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0055] An embodiment of the present invention provides a power module, such as figure 1 and figure 2 As shown, the power module includes: a housing, a heat dissipation bottom plate 5 , a plurality of chip units 15 , a copper bar structure 7 , a separator 14 , a driving circuit board 11 and a current sensor 8 . The heat dissipation bottom plate 5 is arranged at the bottom of the housing. The chip unit 15 i...

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Abstract

The invention belonging to the technical field of the electronic device discloses a power module and a manufacturing method thereof so that technical problems of low integration and high application development difficulty of the traditional power module can be solved. The manufacturing method comprises: chip units provided with power chips, gate resistors and temperature-sensitive resistors are formed; the plurality of chip units are arranged on a heat radiation substrate and conductive elements are connected to the chip units; a copper bar structure and a current sensor are arranged around the chip units on the heat radiation substrate, wherein the copper bar structure has a positive terminal, a negative terminal and an alternating-current pole terminal and the current sensor sleeves the alternating-current pole terminal; potential connection inside the chips units, between the chip units, and between the copper bar structure and the chip units is carried out, so that the plurality of chip units form a half-bridge circuit; a separation board is arranged on the copper bar structure, wherein the separation board has a hollow-out pattern and the conductive elements pass through the hollow-out pattern; and a drive circuit board is arranged at the separation board and the conductive elements and the drive circuit board are connected.

Description

technical field [0001] The invention relates to the technical field of electronic devices, in particular to a power module and a manufacturing method thereof. Background technique [0002] The power module is an advanced hybrid integrated power component with IGBT as the core, consisting of a high-speed and low-power IGBT die, an optimized gate drive circuit, and a fast protection circuit. The IGBT cores in the power module are all high-speed, and the driving circuit is close to the IGBT, so the driving delay is small, so the switching speed of the power module is fast and the loss is small. The power module integrates a real-time detection circuit that can continuously detect the current and temperature of the IGBT. When a serious overload or even a direct short circuit occurs, or when the temperature is overheated, the IGBT will be softly turned off in a controlled manner and a fault signal will be issued at the same time. Compared with the simple IGBT, the power module h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L23/40
CPCH01L21/4882H01L23/40H01L2224/48091H01L2924/00014
Inventor 熊辉陈燕平袁勇时海定忻兰苑蒋云富刘敏安王世平石廷昌卢圣文文驰
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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