Heat dissipation structure of semiconductor device and semiconductor device

Abstract

The embodiment of the invention discloses a heat dissipation structure of a semiconductor device, and a semiconductor device, and relates to the technical field of semiconductors. The heat dissipation structure of the semiconductor comprises an upper surface close to one side of the semiconductor device, a lower surface far away from one side of the semiconductor device, and at least one heat dissipation channel, wherein a heat dissipation window is formed in the upper surface; and the at least one heat dissipation channel comprises an inlet and an outlet, the inlet is arranged to be opposite to the heat dissipation window, the inlet comprises a first cross section and a second cross section, and the opening area of the first cross section is more than that of the second cross section. According to the technical scheme of the structure provided by the invention, the inlet of the heat dissipation channel is corresponding to the first heat dissipation window, the area of the first cross section of the inlet is more than that of the second cross section, the condition that a heat conduction medium flowing in via the inlet has a high flow speed at the second cross section is ensured, fat dissipation of heat of the semiconductor device is ensured, and normal output power of the semiconductor device is also ensured.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of semiconductors, and in particular to a heat dissipation structure of a semiconductor device and the semiconductor device. Background technique [0002] With the maturity of GaN device technology, the advantages of high power density of GaN devices are more clearly displayed, and the industry gradually begins to mass-produce GaN devices. However, as the integration level of integrated circuits increases, higher requirements are placed on the heat dissipation of GaN devices. According to measurements, the heat distribution of GaN devices is mainly concentrated near the Schottky junction of the device, which can continuously generate heat, and when the heat cannot be effectively dissipated, the temperature of the Schottky junction will increase, thereby degrade the power output and RF performance of the device. [0003] Traditional thermal management technologies are represented b...

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a heat dissipation structure of a semiconductor device and a semiconductor device to solve the technical problems of poor cooling effect of the semiconductor device and low output power of the semiconductor device in the prior art

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