A kind of array substrate and display device
A technology of array substrate and substrate substrate, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as small storage capacitance
Active Publication Date: 2020-03-10
WUHAN TIANMA MICRO ELECTRONICS CO LTD
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[0005] Embodiments of the present invention provide an array substrate and a display device to solve the problem of small storage capacitance in the prior art
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[0024] In order to make the object, technical solution and advantages of the present invention more clear, the specific implementation manners of the array substrate and the display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the preferred embodiments described below are only used to illustrate and explain the present invention, not to limit the present invention. And in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.
[0025] An embodiment of the present invention provides an array substrate, such as Figure 1a to Figure 1c As shown, it includes: a base substrate 01, a semiconductor layer 02, a gate insulating layer 03, a gate metal layer 04, an interlayer dielectric layer 05, a source-drain metal layer 06, and a planarization layer 07 are sequentially stacked on the...
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The invention discloses an array substrate and a display device. Through design, the orthographic projections of the semiconductor layer, common electrode lines, source-drain metal layer, common electrode layer and pixel electrode layer on the base substrate have a common overlap in the non-opening area. region, so that the common electrode layer and the pixel electrode layer form a first capacitance at the overlapping area, the common electrode layer and the source-drain metal layer form a second capacitance at the overlapping area, and the semiconductor layer and the common electrode line form a second capacitance at the overlapping area. The overlapping area forms a third capacitor, so that the first capacitor, the second capacitor and the third capacitor are connected in parallel to form a part of the storage capacitor. On the basis of the existing storage capacitor formed by the common electrode layer and the pixel electrode layer in the existing opening area, the array is enlarged by adding the first capacitor, the second capacitor and the third capacitor connected in parallel in the non-opening area The storage capacitor of the substrate can improve the pixel voltage retention rate of the array substrate and reduce the problem of flicker failure of the display device.
Description
technical field [0001] The invention relates to the field of display technology, in particular to an array substrate and a display device. Background technique [0002] With the continuous development of thin film transistor (TFT, Thin Film Transistor) liquid crystal display technology, low temperature polysilicon (LTPS, Low Temperature Poly-silicon) display devices with low power consumption, high resolution, fast response and high aperture ratio are gradually Become mainstream and widely used. [0003] In an LTPS-based TFT display device, the storage capacitor in the array substrate mainly exists in the overlapping area between the pixel electrode and the common electrode in the opening area, and there is no overlap between the pixel electrode and the common electrode in the non-opening area, that is, the thin film transistor area. As the requirements for product resolution and aperture ratio increase, the pixel pitch (PixelPitch) in the array substrate will become smalle...
Claims
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IPC IPC(8): H01L27/12
CPCH01L27/1255
Inventor 贝亮亮朱绎桦
Owner WUHAN TIANMA MICRO ELECTRONICS CO LTD