Gas feeding device and method of vertical type diffusion furnace

Abstract

The invention discloses a gas feeding device and method of a vertical type diffusion furnace. The gas feeding device comprises a gas feeding pipe, a first balance pipe, a first flow valve and a second flow valve, wherein the first flow valve controls the flow velocity of reaction gas in the first balance pipe; as the diffusion directions of the reaction gas in the first balance pipe and the second balance pipe are different, the reaction gas conveyed from the first balance pipe to an in-furnace pipe can balance gas pressures at different positions in the in-furnace pipe, so that the gas pressures at different positions in a pipeline of the in-furnace pipe are equal; therefore, the flow velocity of the reaction gas at gas discharging holes in the in-furnace pipe is consistent; the reaction gas can be uniformly diffused to the surfaces of wafers at the different positions so as to keep consistency of growing thicknesses and quality of thin films on the surfaces of different wafers.

Description

technical field [0001] The invention relates to the field of semiconductor chip manufacturing, in particular to a gas inlet device and method for a vertical diffusion furnace. Background technique [0002] With the rapid development of semiconductor technology, semiconductor chips are widely used in electronic devices (such as computers, mobile phones, tablet computers, etc.). In the process of manufacturing semiconductor chips, thin films need to be grown on wafers (ie, silicon wafers), and the commonly used thin film growth equipment is a diffusion furnace. [0003] At present, some mainstream thin film growth equipment is a vertical diffusion furnace based on a vertical design. Such as figure 1 As shown, in the vertical diffusion furnace along the vertical direction, dozens or even hundreds of wafers are stacked, and the reaction gas is delivered from the bottom of the vertical diffusion furnace by the inlet pipe. Wherein, the inlet pipe includes a furnace inner pipe a...

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Problems solved by technology

When the inlet pipe exists in the vertical diffusion furnace and the vertical pipe is long, it is difficult to maintain the same flow rate of the reaction gas in the inlet pipe entering the vertical diffusion furnace from all the outlet holes, thus resulting in different positions in the vertical diffusion furnace. The reactive gas distribution on the wafer surface is uneven, so the thickness and quality of film growth on different wafer surfaces are not the same

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