Semiconductor structure and manufacturing method thereof
A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as poor passivation layer formation quality, and achieve the effect of improving formation quality and reducing fracture
Active Publication Date: 2019-09-27
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0003] However, the formation quality of the prior art passivation layer is poor
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[0030] The formation quality of the passivation layer in the prior art is poor, and the reason thereof is analyzed in combination with the manufacturing method of the semiconductor structure in the prior art. combined reference Figure 1 to Figure 5 , which shows a schematic structural diagram corresponding to each step in an embodiment of a method for manufacturing a semiconductor structure in the prior art.
[0031] refer to figure 1 A substrate 100 is provided, a top metal layer 110 is formed on the surface of the substrate 100 , and a first opening 111 exposing the substrate 100 is formed in the top metal layer 110 .
[0032] refer to figure 2 A bottom passivation layer 121 is formed on the substrate 100 at the bottom of the first opening 111 , and the bottom passivation layer 121 also covers part of the top metal layer 110 on both sides of the first opening 111 .
[0033] refer to image 3 , forming a conductive film 130 covering the top metal layer 110 and the botto...
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Abstract
The invention provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the steps of: providing a substrate; forming a top metal layer having a first opening on the substrate; forming a first bottom passivation layer positioned on the substrate at the bottom part of the first opening, and a second bottom passivation layer positioned on the top metal layer and separated from the first bottom passivation layer; forming a conductive layer covering the top metal layer, the first bottom passivation layer and the second bottom passivation layer, wherein the conductive layer has a second opening, and the side wall of the second opening is level with the side wall of the first bottom passivation layer; and forming a top passivation layer on the bottom part and side wall of the second opening and part of the conductive layer. Through forming the first bottom passivation layer and the second bottom passivation layer, the side wall of the second opening in the conductive layer is level with the side wall of the first bottom passivation layer, thus the conductive layer has no corners in the top part corner region of the first bottom passivation layer, and the fracture problem of a top passivation layer in the top part corner region because the top passivation layer bears overlarge stress is reduced.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In the process of manufacturing semiconductor structures, the passivation of the surface of semiconductor structures is one of the key technologies. By forming a passivation layer on the surface of the semiconductor structure, various charges in the oxide layer inside the semiconductor structure can be reduced, the ability of the semiconductor structure to resist ion contamination can be enhanced, and the interconnection of internal devices of the semiconductor structure and the electrical characteristics of the surface of the semiconductor structure can be protected. , To prevent the devices of the semiconductor structure from mechanical damage or chemical damage. [0003] However, the formation quality of the prior art passivation layer is poor. Contents of the invention [0004] The pr...
Claims
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IPC IPC(8): H01L21/56H01L23/31
Inventor 王晓东
Owner SEMICON MFG INT (SHANGHAI) CORP