Epitaxial structure and growth method for improving luminous efficiency of purple LED
A technology of epitaxial structure and luminous efficiency, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low luminous efficiency of purple light diodes, and achieve the effect of increasing effective potential barrier, improving light extraction efficiency, and increasing injection efficiency.
Active Publication Date: 2019-03-12
宁波安芯美半导体有限公司
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an epitaxial structure and a growth method for improving the luminous efficiency of purple LEDs, which are used to solve the problem of low luminous efficiency of purple LEDs in the prior art
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0033] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other under the condition of no conflict.
[0034] It should be noted that the diagrams provided in the following embodiments are only used to illustrate the basic concept of the present invention in a schematic way, although the diagrams only show the components related to the present invention rather than the number, shape and number of...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides an epitaxial structure for improving light emitting efficiency of a purple LED. The epitaxial structure comprises the components of an AlN substrate, a high-temperature UGaN layer, an N-type GaN layer, a multi-quantum well structure MQW, an active region multi-quantum well structure MQW, an In / Mg-doped EBL layer and a P-type GaN layer, wherein the AlN substrate, the high-temperature UGaN layer, the N-type GaN layer, the multi-quantum well structure MQW, the active region multi-quantum well structure MQW, the In / Mg-doped EBL layer and the P-type GaN layer are successively arranged from bottom to top. The In / Mg-doped EBL layer comprises a [AlxGa1-xN / GaN]n multi-period structure which comprises GaN layers and AlxGa1-xN layers which are alternatively stacked, wherein the value of x is 0.02-0.2, and n is an integer and the value of n is 6-12. The total thickness of the AlxGa1-xN layer and the GaN layer of each period in the [AlxGa1-xN / GaN]n multi-period structure is 50-100 nm. The concentration of doped Mg in the GaN layer is 1.0E+19 to 8.0E+19. The concentration of the doped In in the AlxGa1-xN layer is 2.0E+18 to 9.0E+18. The epitaxial structure can effectively improve combining efficiency between electrons and holes of the purple LED and furthermore improves light emitting efficiency.
Description
technical field [0001] The invention relates to the technical field of preparation of III-nitride materials, in particular to an In / Mg-doped EBL layer structure, in particular to an epitaxial structure and a growth method that can effectively improve the recombination efficiency of electrons and holes of a violet light diode and thereby improve the luminous efficiency. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material and can directly convert electricity into light. Ultraviolet LED, or UV-LED for short, refers to an LED with a light-emitting wavelength of 100nm-400nm. Currently, the widely used ultraviolet light mainly uses the mercury encapsulated in the lamp tube to heat and excite to emit ultraviolet light. Due to the presence of toxic mercury, the use of mercury lamps as an ultraviolet light source is not suitable for th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/32
CPCH01L33/0075H01L33/145H01L33/325
Inventor 吴礼清程斌
Owner 宁波安芯美半导体有限公司