MOS pipe overcurrent protection circuit

An overcurrent protection circuit, MOS tube technology, applied in circuits, transistors, electrical components, etc., can solve the problems of high cost and high power consumption, and achieve the effect of reducing power consumption and cost, small size, and low consumption

Pending Publication Date: 2017-11-24
YUNNAN POWER GRID CO LTD ELECTRIC POWER RES INST
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The application provides a MOS tube overcurrent protection circuit to solve the problems of

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOS pipe overcurrent protection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The MOS tube overcurrent protection circuit in this application utilizes the conduction voltage V of the MOS tube DS In the event of an overcurrent fault, the voltage drop occurs, and it is judged whether the MOS tube is overcurrent. Here, the turn-on voltage V of the MOS transistor DS The characteristics of a voltage drop during an overcurrent fault will be described. When the MOS tube is not connected, the resistance between its S pole and D pole is relatively large; when the MOS tube is just connected, the resistance between its S pole and D pole decreases rapidly; when the MOS tube is fully turned on, The on-resistance of the MOS tube remains unchanged, and this resistance is the on-resistance. At this time, the voltage between the S pole and the D pole of the MOS tube is the conduction voltage V DS . After the MOS tube is fully turned on, if the power grid system operates normally and stably, the current flowing through the MOS tube remains unchanged, and the co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an MOS pipe overcurrent protection circuit. The characteristic that a connection voltage VDS of an MOS pipe generates voltage drop when overcurrent occurs on the MOS pipe is utilized to judge whether the overcurrent occurs on the MOS pipe or not. According to the specific judgment process, after the MOS pipe is connected, if the connection voltage VDS is stable, it is judged that the MOS pipe is in normal run; if the connection voltage VDS of the MOS pipe is raised, it is judged that an overcurrent fault occurs on the MOS pipe. Compared with a traditional MOS pipe overcurrent protection circuit, the characteristic that the connection voltage VDS of the MOS pipe generates the voltage drop is utilized in the MOS pipe overcurrent protection circuit, the use of a current sampler and the like with high cost and high power is avoided, and the power consumption and cost of the protection circuit are drastically lowered.

Description

technical field [0001] The present application relates to the field of MOS tube protection, in particular to a MOS tube overcurrent protection circuit. Background technique [0002] In recent years, semiconductor devices have developed rapidly, and MOS (Metal Oxide Semiconductor) tubes have gradually replaced relays due to their high switching frequency and no mechanical loss, and then become the main current control components in power equipment, such as in switching amplifiers , MOS tube is the key device to control its current. However, the MOS tube lacks circuit overload capability, that is, when a short circuit or overcurrent fault occurs in the circuit where it is located, the MOS tube is easily broken down. At present, the method to solve this problem is usually to add an overcurrent protection circuit to the MOS tube. [0003] In the prior art, the working principle of the MOS tube overcurrent protection circuit is: collect the current signal on the circuit through...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K17/081
CPCH03K17/08104
Inventor 许守东陈勇李胜男郭成周鑫
Owner YUNNAN POWER GRID CO LTD ELECTRIC POWER RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap