Band-gap reference voltage circuit and control method thereof
A technology of reference voltage and control method, which is applied in the direction of control/regulation system, adjustment of electrical variables, instruments, etc., can solve the problems of complex operation, increase of layout area, loss of wearable electronic technology, etc., and achieve low power consumption and high efficiency power consumption Effect
Active Publication Date: 2017-12-01
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
But this improvement method means that the operation becomes more complicated and increases the layout area to a certain extent
[0005] On the other hand, 1μA is the current technical limit and cannot be made smaller, but even a Band Gap of 1μA is still a huge loss for wearable electronic technology
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[0049] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0050] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
[0051]It will be understood that when an element or layer is referred to...
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The invention provides a control method of a band-gap reference voltage circuit. The method includes the steps of enabling the band-gap reference voltage circuit, detecting a drain voltage of the band-gap reference voltage circuit, comparing the drain voltage with a threshold voltage to control the band-gap reference voltage circuit to enter a sleep mode or a working mode. The invention further provides the band-gap reference voltage circuit. The circuit includes a starting circuit, a biasing circuit, an output circuit and a self-controlled circuit, wherein the starting circuit is configured for controlling the band-gap reference voltage circuit to enter the working mode; the biasing circuit is connected with the starting circuit and configured for generating biasing current related to external environmental changes; the output circuit is connected with the biasing circuit and configured for outputting the band-gap reference voltage; the self-controlled circuit is configured for controlling the band-gap reference voltage circuit to enter the working mode or the sleep mode to effectively reduce the power consumption of the band-gap reference voltage circuit. The band-gap reference voltage circuit and the control method thereof can achieve automatic detection of the external environmental changes and automatic switching to the sleep mode and take the most efficient effect of reducing power consumption.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bandgap reference voltage circuit and a control method thereof. Background technique [0002] With the evolution of wearable electronic technology, low power consumption is becoming more and more important. As a voltage source that provides a stable voltage, the Band Gap reference voltage (Band Gap) is more suitable for use in wearable electronic technology if its power consumption can be reduced. [0003] Band Gap power consumption is always on in the circuit. According to its power consumption and noise resistance, it can be divided into many different types of Band Gap circuits. For example, it can be divided into 10μA (high noise resistance, applicable to various equipment), 5μA (higher noise immunity, not suitable for execution units in high-speed equipment, such as CPU, RF), and 1μA (low noise immunity, only suitable for low-speed equipment). It can be seen that ...
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IPC IPC(8): G05F1/56
Inventor 邓志兵杨家奇黄正太黄正乙翁文君郭俊涛
Owner SEMICON MFG INT (SHANGHAI) CORP