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Method, apparatus and system for providing nitride cap layer in replacement of metal gate structure

A gate structure and nitride technology, used in the field of providing a nitride cover layer, equipment and system in place of a metal gate structure, can solve problems such as unsatisfactory, detrimental semiconductor device Vt, etc.

Inactive Publication Date: 2017-12-01
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The presence of voids or seams 175 may detract from the Vt of the semiconductor device and is therefore not ideal

Method used

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  • Method, apparatus and system for providing nitride cap layer in replacement of metal gate structure
  • Method, apparatus and system for providing nitride cap layer in replacement of metal gate structure
  • Method, apparatus and system for providing nitride cap layer in replacement of metal gate structure

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Embodiment Construction

[0017] Various illustrative embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. Of course, it will be appreciated that in developing any such actual embodiment, many implementation-specific decisions must be made in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints that would Varies with different implementations. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nonetheless be a routine undertaking for those having ordinary skill in the art having the benefit of this disclosure.

[0018] The object of this patent will now be explained with reference to the accompanying drawings. Various structures, systems and devices are shown in the drawings for purposes of illustration only and not to obscure the disclosure with details that are well k...

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PUM

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Abstract

The invention relates to a method, apparatus and system for providing a nitride cap layer in replacement of a metal gate structure. The invention discloses a semiconductor device, comprising a semiconductor substrate; at least one gate structure disposed above the semiconductor substrate, wherein the gate structure comprises a gate structure cavity partially filled with at least one metal layer; and an ultraviolet (UV) cured high density plasma (HDP) nitride cap layer in the gate structure cavity above the at least one metal layer. We also disclose at least one method and at least one system by which the semiconductor device may be formed. The UV cured HDP nitride cap layer may be substantially free of voids or seams, and as a result, the semiconductor device may have a reduced Vt shift relative to comparable semiconductor devices known in the art.

Description

technical field [0001] The present disclosure relates generally to the fabrication of cutting-edge semiconductor devices, and more particularly to providing improved nitride capping in replacement metal gate structures including self-aligned contacts. Background technique [0002] In the manufacture of semiconductor devices, individual procedures are required to create packaged semiconductor devices from bare semiconductor materials. From the initial growth of the semiconductor material, slicing of the semiconductor crystal into individual wafers, the fabrication stages (etching, doping, ion implantation, or the like), to the packaging and final testing of the completed device, the various processes are highly dependent on each other. Each is different and each has a specific purpose, so these procedures can be performed at different manufacturing locations with different control schemes. [0003] Generally, a group of semiconductor wafers (sometimes referred to as a batch)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/40H01L29/423H01L29/78
CPCH01L29/401H01L29/4236H01L29/42364H01L29/78H01L21/0217H01L21/02274H01L21/02348H01L29/66545H01L21/31055H01L21/823418H01L21/823437H01L27/088
Inventor H·曹C-C·常K·奥尼西S·斯里瓦他纳空
Owner GLOBALFOUNDRIES INC