A kind of ultraviolet laser surface cutting method of LED wafer

Abstract

The invention relates to the technical field of laser processing, and discloses an ultraviolet laser surface cutting method for an LED wafer. The ultraviolet laser surface cutting method comprises the steps of placing the wafer on a bearing platform firstly; moving a container which stores glue to the upward side of the wafer and spraying glue to drop on the wafer; next, starting the bearing platform to rotate at a high speed, performing spin-drying on the glue on the wafer to enable the glue to be paved on the surface of the wafer; adopting a multi-point laser apparatus to emit a laser beam, forming multi-light-spot focusing on the laser incident surface of the wafer, and cutting the wafer by laser; cleaning glue on the wafer, spraying water to the laser incident surface of the wafer by a water spraying apparatus, and rotating the bearing platform at the same time to remove glue from the wafer; and completing the processing and separating the wafer into core particles. By adoption of the ultraviolet laser surface cutting method, the problems of low efficiency, insufficient processing effect and the like of the existing red and yellow light LED wafer can be solved; the processing efficiency can be greatly improved, the processing effect can be more excellent, the surface cutting lines can be more uniform; and phenomena of smelting slag, splashing materials, ablation and the like can be avoided.

Description

technical field [0001] The invention relates to the technical field of laser processing, and more specifically relates to an ultraviolet laser surface cutting method of an LED wafer. Background technique [0002] In the LED industry, red and yellow LED wafers are usually grown on silicon and other substrate materials by chemical vapor deposition to grow light-emitting layers such as aluminum indium phosphide, indium gallium nitride, and aluminum gallium arsenide. The current 2-inch or 4-inch red and yellow LED wafers generally use silicon materials as the substrate, and the LED wafers need to be cut into several small chips before packaging by end customers. For the cutting of red and yellow LED wafers, the current laser cutting method has gradually replaced diamond wheel cutting. At present, the UV surface cutting method generally adopts single-light spot cutting, and the processing speed is generally less than 200mm / s, and the UV laser is on the wafer surface. Processing ...

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Problems solved by technology

[0003] The purpose of the present invention is to solve the technical problems existing in the prior art, and provide an ultraviolet laser surface cutting method for LED wafers, which can solve the problems of the existing red and yellow LED wafers, such as slow efficiency and the need to improve the processing effect, so that the processing The efficiency is greatly improved, the processing effect is better, the surface cutting line is more uniform, and there is no slag, spatter, ablation, etc.

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