Film transistor structure and AMOLED driving circuit

A technology of thin film transistors and oxide semiconductors, which is applied in the direction of transistors, circuits, electrical components, etc., can solve the problems of poor working stability of thin film transistors, improve working stability, solve poor working stability, and improve screen display quality Effect

Inactive Publication Date: 2017-12-08
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Problems solved by technology

[0005] The purpose of the present invention is to provide a thin film transistor structure and an AMOLED driving circuit that can improve the working stability of devices such as thin film transistors, thereby improving the picture displa

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  • Film transistor structure and AMOLED driving circuit
  • Film transistor structure and AMOLED driving circuit
  • Film transistor structure and AMOLED driving circuit

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[0063] The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0064] Please refer to figure 1 , figure 1 It is a schematic structural diagram of an embodiment of the thin film transistor structure of the present invention. The thin film transistor structure 10 of this embodiment includes a thin film substrate 11, a buffer layer 12, a metal oxide semiconductor layer 13, a gate insulating layer 14, a gate metal layer 15, an interlayer insulating layer 16, a source metal layer 17, and a drain metal layer. Layer 18 an...

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Abstract

The invention discloses a film transistor structure. The structure comprises a glass substrate, a buffer layer, a metal oxide semiconductor layer, a gate insulating layer, a gate metal layer, an interlayer insulating layer, a source metal layer, a drain metal layer and a protection layer. A shading metal layer is arranged between the glass substrate and the buffer layer. A projection area of the gate metal layer in a plane where the glass substrate is located aligns at a projection area of the shading metal layer in the plane where the glass substrate is located. A projection area of the shading metal layer in the plane where the glass substrate is located covers a projection area of the metal oxide semiconductor layer of a channel area in the plane where the glass substrate is located. The invention also provides an AMOLED driving circuit. In the invention, through designing the shading metal layer, work stability of devices of the film transistor and the like in the AMOLED driving circuit is increased and frame display quality of a corresponding AMOLED display apparatus is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor structure and an AMOLED driving circuit. Background technique [0002] With the development of technology, AMOLED (Active-matrix organic light emitting diode, active-matrix organic light-emitting diode) display devices are favored by more and more users. Existing AMOLED display devices generally adopt a 3T1C AMOLED driving circuit, that is, three thin film transistors and a capacitor form the AMOLED driving circuit. [0003] The thin film transistors in the existing AMOLED driving circuit are affected by the outgoing light and external light, which will cause the thin film transistors and other devices in the AMOLED driving circuit to work unstable, thereby affecting the picture display quality of the AMOLED display device. [0004] Therefore, it is necessary to provide a thin film transistor structure and an AMOLED driving circuit to solve the problems e...

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Application Information

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IPC IPC(8): H01L29/786G09G3/3233
CPCG09G3/3233H01L29/78633H01L29/7869
Inventor 余明爵徐源竣
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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