Thin film transistor manufacturing method, TFT array substrate and flexible display screen

Abstract

The present invention provides a thin film transistor manufacturing method and a TFT array substrate. The TFT array substrate includes a flexible substrate 10, a gate 12 stacked on a surface of the flexible substrate 10, a gate insulating layer covering the gate 12, 14), an active layer (16) stacked on the gate insulating layer (14), a planarization layer provided on the surface of the flexible substrate (10) and located at two opposite sides of the gate insulating layer A source electrode and a drain electrode, the planar layer being connected to the gate insulating layer, the source electrode and the drain electrode being both formed, On the active layer (16) and the planarization layer (18); and the source (19) and the drain (20) are disposed at intervals. Also provides a flexible display.

Description

technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a method for manufacturing thin film transistors, a TFT array substrate and a flexible display screen. Background technique [0002] At present, thin-film transistor (Thin-film transistors, TFT) array substrates are widely used in different types of display devices, such as flexible display screens, LCD or OLED display screens. A high-quality gate insulating layer in a thin film transistor is the key to achieving important parameters such as good electrical stability and small leakage current of the TFT array substrate. Therefore, the gate insulating layer is usually made of inorganic materials, such as using SiNx or SiOx through Chemical vapor deposition forms. When the TFT array substrate is applied to a flexible display, as the flexible substrate bends, the TFT film layer structure on it will be subjected to tensile stress and compressive stress correspondin...

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Problems solved by technology

[0003] Embodiments of the present invention provide a method for manufacturing a thin film transistor and an array substrate, which are used to solve the technical problem that the climbing structure with a height difference in the gate insulating layer is broken when it is stressed and affects other layer structures

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