Check patentability & draft patents in minutes with Patsnap Eureka AI!

Simplifying processing method of multiple elliptical embedded flaws in high temperature structure

A processing method, elliptical technology, applied in the direction of applying stable tension/pressure to test the strength of materials, measuring devices, instruments, etc., can solve the problems of conservative size of large cracks, affecting the safety and reliability of high-temperature components, etc., and achieve convenient and quick merger , improve the accuracy and efficiency of evaluation, and simplify the effect of processing methods

Active Publication Date: 2017-12-15
TIANJIN UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First of all, the size of the large cracks after merging is too conservative, and only the relative distance of the cracks is considered as an influencing factor. Finally, the above merging criteria are established based on linear elastic fracture mechanics and elastoplastic fracture mechanics, which may not be applicable under high temperature conditions. These will affect Evaluation of Safety and Reliability of High Temperature Components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Simplifying processing method of multiple elliptical embedded flaws in high temperature structure
  • Simplifying processing method of multiple elliptical embedded flaws in high temperature structure
  • Simplifying processing method of multiple elliptical embedded flaws in high temperature structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The technical scheme of the present invention will be further described below in conjunction with specific examples.

[0019] The simplified processing method for multi-elliptical buried defects in the high-temperature structure of the present invention comprises the following steps:

[0020] 1. Taking the elliptical buried creep cracks interfering with each other in the flat plate under the action of tensile load as the object, including the flat plate with finite thickness under high temperature conditions, a constant tensile load is applied on both sides of the flat plate, and the flat plate contains coplanar equal-sized Double buried cracks, unequal cracks are simplified to double equal cracks which are the same as the larger cracks. Coplanar cracks refer to cracks projected onto the same plane, which is a plane perpendicular to the applied external force. A large amount of experimental evidence has shown that, compared with the stress intensity factor, the fracture...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a simplifying processing method of multiple elliptical embedded flaws in a high temperature structure. The method comprises the following steps: fitting an interference factor formula of a coplanar isometric embedded crack by using a mass of analog data, and merging and simplifying the flaws through the fitting formula. Compared with existing merging criterions, the simplifying processing method of multiple elliptical embedded flaws in the high temperature structure has the advantages of suitableness for the reliability assessment of high temperature parts, realization of the merged crack dimension meeting the real condition of the crack interference in the structure, convenience and fastness in merging of the embedded flaws, and great increase of the assessing precision and the assessing efficiency of flaw-containing parts.

Description

technical field [0001] The invention relates to a simplified treatment method for engineering structures with multiple elliptical buried defects working under high temperature conditions, or when interference occurs in high temperature structures with multiple elliptical buried cracks, the buried cracks are combined and simplified in pairs. Background technique [0002] Metal structures working in high temperature environments will inevitably have various defects in the process of production and service. Among them, due to the concealment of buried cracks, when the nominal stress is still very low, the local stress concentration of metal components has reached a very high value, so that the cracks expand rapidly, resulting in fracture damage when the component is far from reaching the strength limit of the material. At the same time, the initiation and propagation of creep cracks is a major failure mechanism of high-temperature components with defects and leads to failure be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N3/18G01N3/06
CPCG01N3/06G01N3/18
Inventor 赵雷赵尊一徐连勇韩永典荆洪阳吕小青
Owner TIANJIN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com