Word line resistance test method and three-dimensional memory failure analysis method

Abstract

The invention discloses a word line resistance test method and a three-dimensional memory failure analysis method. According to the word line resistance test method, first, multiple through hole connecting lines in a first step region and a second step region of a three-dimensional memory are exposed; second, by forming a connection metal layer in the first step region, multiple word lines are connected with the connection metal layer through the through hole connecting lines; and last, resistance of every two to-be-tested connecting lines is tested in the second step region, the resistance of the three to-be-tested connecting lines is calculated according to first test resistance, second test resistance and third test resistance obtained through testing, that is, word line resistance corresponding to the three to-be-tested connecting lines is obtained, therefore, measurement of the word line resistance in the three-dimensional memory is realized, and a foundation is laid for performing failure analysis on the three-dimensional memory.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and more specifically, to a word line resistance testing method and a three-dimensional memory failure analysis method. Background technique [0002] Failure analysis is based on the failure mode and phenomenon, through analysis and verification, simulates the failure phenomenon, finds out the cause of failure, and digs out the failure mechanism. It has strong practical significance in improving product quality, technology development, improvement, product repair and arbitration failure accidents. [0003] Failure analysis for 3D memory is a very important link in the development and improvement of 3D memory. When doing failure analysis, it is often necessary to analyze various parameters of 3D memory, among which the resistance characteristic is also one of the important parameters. The conventional method of measuring the resistance of components is to use a multimeter to meas...

AI Technical Summary

Problems solved by technology

The conventional method of measuring the resistance of components is to use a multimeter to measure, but when testing the resistance of each structure of a three-dimensional memory, it is often necessary to measure the metal layer or tungsten plug layer of the chip. Needle table for testing

[0004] However, due to the long length of the word line and the special structure of the three-dimensional memory, the measurement range of the nano-point needle platform is far smaller than the length of the word line, which is difficult to meet the measurement of the word line resistance of the three-dimensional memory.

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