Chip surface etching device

Abstract

The invention discloses a chip surface etching device. The chip surface etching device comprises a workbench in a hollow structure, an etching liquid tank is welded to the inner bottom wall of one side of the workbench, a high-pressure water pump is in threaded connection with the bottom of one side of the etching liquid tank and is in threaded connection the inner bottom wall of the workbench, and a water outlet of the high-pressure water pump is in threaded connection with a liquid outlet pipe. The top of one side of the workbench is provided with a through hole, the liquid outlet pipe penetrates the workbench through the through hole, and a spraying rod is in threaded connection with high-pressure nozzles. By arrangement of the spraying rod and the high-pressure nozzles, etching liquidcan be uniformly sprayed to chips to realize etching; by an air injection pipe and air injection holes, high-pressure air is jetted from the air injection holes to blow the etching liquid remained inrecessed areas out of the chips to avoid over-etching which results in preset conductive path breakage; by arrangement of a recovery groove, the etching liquid blown out by the high-pressure air can be recycled.

Description

technical field [0001] The invention relates to the technical field of chip etching, in particular to an etching device for chip surface. Background technique [0002] The chip is an indispensable basic component in electronic products, and it sprays etching solution on the surface of the substrate to etch the copper box to form a conductive circuit. However, in the etching process, a phenomenon called "pool effect" often occurs, that is, the copper box on the surface of the substrate will form a depressed area after being etched by the etching solution, and the reacted etching solution is easy to stay in the depressed area, making relatively The late sprayed etching solution cannot enter the recessed area to continue etching, resulting in insufficient etching depth. This is one of the defects. On the other hand, the reacted etching solution stays in the recessed area and will continue to erode the copper box on the side of the recessed area. Excessive etching results in er...

AI Technical Summary

Problems solved by technology

However, in the etching process, a phenomenon called "pool effect" often occurs, that is, the copper box on the surface of the substrate will form a depressed area after being etched by the etching solution, and the reacted etching solution is easy to stay in the depressed area, making relatively The late sprayed etching solution cannot enter the recessed area to continue etching, resulting in insufficient etching depth. This is one of the defects. On the other hand, the reacted etching solution stays in the recessed area and will continue to erode the copper box on the side of the recessed area. Causes excessive etching and leads to erosion of predetermined conductive paths

The above two problems have seriously affected the production quality of the product, resulting in unstable quality and increased cost.

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