Metallic carrier for layer transfer and methods for forming the same
A transfer layer and metal layer technology, which is applied in semiconductor devices, semiconductor lasers, semiconductor/solid-state device manufacturing, etc., can solve the problems of increasing device manufacturing complexity, current crowding, and reducing device output.
Inactive Publication Date: 2018-01-26
SOITEC SA
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- Application Information
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Problems solved by technology
The physical layout of the second contact 150 relative to the n-type layer 120 can cause current crowding in the current flowing between the p-type layer 140 and the n-type layer 120
Removing part of the device may increase the complexity of device fabrication, may reduce the area available for light generation, and may also reduce device yield
Method used
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[0025] The drawings presented herein do not represent actual views of any particular material, device, or method, but are merely idealized representations used to describe embodiments of the invention.
[0026]It should be understood that reference to an element herein using a term such as "first," "second," etc. does not impose a limitation on the quantity or order of those elements, unless such a limitation is clearly stated. Rather, these designations may be used herein as a convenient method of distinguishing between two or more elements or instances of an element. Thus, references to first and second elements do not imply that only two elements may be used here or that the first element must precede the second element in some way. Also, unless stated otherwise, a set of elements may comprise one or more elements.
[0027] Elements described herein may include multiple instances of the same element. These elements may be shown generally by a designation in numerical form...
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Abstract
The invention relates to a metallic carrier for layer transfer and methods for forming the same. Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate a semiconductor substrate by forming a weakened zone in a donor structure at a predetermined depth to define a transfer layer between an attachment surface and the weakened zone and a residual donor structure between the weakened zone and a surface opposite the attachment surface. A metallic layer is formed on the attachment surface and provides an ohmic contact between the metallic layer and the transfer layer, a matched Coefficient of Thermal Expansion (CTE) for the metallic layer that closely matches a CTE of the transfer layer, and sufficient stiffness to provide structural support to the transfer layer. The transfer layer is separated from the donor structure at the weakened zone to form a composite substrate comprising the transfer layer the metallic layer.
Description
[0001] This application is a divisional application of a Chinese patent application with the application number 201210022191.2, the application date is February 1, 2012, and the invention title is "Metal carrier for layer transfer and method for forming the metal carrier". technical field [0002] In general, the present invention relates to the fabrication of engineered substrates for use in fabricating semiconductor structures or devices, intermediate structures formed during the fabrication of semiconductor structures or devices, and to semiconductor structures or devices using engineered substrates. Background technique [0003] Substrates comprising one or more layers of semiconductor material are used to form a wide variety of semiconductor structures and devices including, for example, integrated circuit (IC) devices such as logic processors and memory devices, as well as discrete devices such as radiation emitting devices (eg, light emitting diodes (LEDs), resonant ca...
Claims
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IPC IPC(8): H01L33/00H01L33/20H01S5/02H01S5/323H01S5/183
CPCH01S5/021H01S5/0215H01S5/0217H01S5/0218H01S5/183H01S5/32341H01L33/0093H01L21/20
Inventor C·J·维尔霍文C·阿雷纳
Owner SOITEC SA