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A kind of 3D dynamic random access memory and data preservation method

A dynamic random access, memory technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of small capacity, easy data loss, loss and so on

Active Publication Date: 2018-09-07
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, DRAM can only hold data for a short period of time. In order to keep data, DRAM uses capacitive storage to store data. This method must be refreshed (refresh) once in a while, and data is saved every time it is refreshed. If DRAM If it is not refreshed, the stored information will be lost. When the DRAM is powered off, the DRAM cannot be refreshed, which will cause the data in the DRAM to be lost.
Another reason for easy data loss is that the current DRAM has a small capacity, which makes data easy to lose

Method used

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  • A kind of 3D dynamic random access memory and data preservation method
  • A kind of 3D dynamic random access memory and data preservation method
  • A kind of 3D dynamic random access memory and data preservation method

Examples

Experimental program
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Embodiment 1

[0040] In a specific embodiment, such as figure 1 As shown, a 3D dynamic random access memory is provided, including a plurality of volatile data storage devices 30, a main control logic chip 21 and a power storage device 40, the input terminal of the main control logic chip 21 and the volatile data storage device The device 30 is electrically connected in a three-dimensional stack body, the output end of the main control logic chip 21 is used to electrically connect with the non-volatile memory 10, under the electric supply of the power storage device 40, the main control logic chip 21 is used to drive the The data downloaded from the volatile data storage device 30 is forwarded and copied to the non-volatile memory 10 .

[0041]Among them, since the existing three-dimensional stack body does not use 3D dynamic random access memory technology, the capacity is very small, and data is easily lost. In this embodiment, a 3D DRAM (3D volatile data storage device, 3D dynamic random...

Embodiment 2

[0058] In another specific embodiment, the present invention also provides a method for storing data in a dynamic random access memory, including:

[0059] Step S1: providing the above-mentioned 3D DRAM;

[0060] Step S2: supplying power to the 3D DRAM, and loading data into the volatile data storage device 30 by the main control logic chip 21 in the 3D DRAM;

[0061] Step S3: When the memory is powered off, the power storage device 40 supplies power to the main control logic chip and connects the non-volatile memory 10 to the main control logic chip 21;

[0062] Step S4: The main control logic chip 21 drives and forwards and copies the loaded data to the non-volatile memory 10 .

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Abstract

The invention discloses a 3D (Three-dimensional) dynamic random access memory, which comprises multiple volatile data storage devices, a main control logic chip and an electric power storage device. An input end of the main control logic chip and the volatile data storage devices are electrically connected into a three-dimensional stack body; an output end of the main control logic chip is electrically connected with the volatile data storage devices; under the power supply of the electric power storage device, the main control logic chip is used for driving data downloaded from the volatile data storage devices to forward and copy to the volatile data storage devices. When the volatile data storage devices are powered off, the main control logic chip already stores the downloaded data into a nonvolatile memory in advance, so that the aim of data storage is achieved. The invention also discloses a data storage method of the 3D dynamic random access memory, wherein the data storage method has the technical effect.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a 3D dynamic random access memory, and also to a data storage method of the 3D dynamic random access memory. Background technique [0002] At present, DRAM (Dynamic Random Access Memory), that is, dynamic random access memory, is the most common system memory, and the read and write speed of DRAM is much faster than that of solid-state drives. However, DRAM can only hold data for a short period of time. In order to keep data, DRAM uses capacitive storage to store data. This method must be refreshed (refresh) once in a while, and data is saved every time it is refreshed. If DRAM If it is not refreshed, the stored information will be lost. When the DRAM is powered off, the DRAM cannot be refreshed, which will cause the data in the DRAM to be lost. Another reason for easy data loss is that the current DRAM has a small capacity, which makes data easy to lose. [0003] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4074G11C5/02G06F3/06
Inventor 沈建宏
Owner CHANGXIN MEMORY TECH INC