Unlock instant, AI-driven research and patent intelligence for your innovation.

3D (Three-dimensional) dynamic random access memory and data storage method

A dynamic random access and memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as small capacity, data loss, and easy data loss

Active Publication Date: 2018-01-30
CHANGXIN MEMORY TECH INC
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, DRAM can only hold data for a short period of time. In order to keep data, DRAM uses capacitive storage to store data. This method must be refreshed (refresh) once in a while, and data is saved every time it is refreshed. If DRAM If it is not refreshed, the stored information will be lost. When the DRAM is powered off, the DRAM cannot be refreshed, which will cause the data in the DRAM to be lost.
Another reason for easy data loss is that the current DRAM has a small capacity, which makes data easy to lose

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 3D (Three-dimensional) dynamic random access memory and data storage method
  • 3D (Three-dimensional) dynamic random access memory and data storage method
  • 3D (Three-dimensional) dynamic random access memory and data storage method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] In a specific embodiment, such as figure 1 As shown, a 3D dynamic random access memory is provided, including a plurality of volatile data storage devices 30, a main control logic chip 21, and a power storage device 40. The input end of the main control logic chip 21 and the volatile data storage The device 30 is electrically connected in a three-dimensional stack. The output end of the main control logic chip 21 is used to electrically connect with the non-volatile memory 10. Under the power supply of the power storage device 40, the main control logic chip 21 is used to drive the The data downloaded from the volatile data storage device 30 is forwarded and copied to the nonvolatile memory 10.

[0041] Among them, since the existing three-dimensional stack body does not use 3D dynamic random storage technology, the capacity is small, and data is easily lost. In this embodiment, a 3D DRAM (3D dynamic random access memory) is proposed. ) That is, the volatile data storage d...

Embodiment 2

[0058] In another specific embodiment, the present invention also provides a data storage method for a dynamic random access memory, including:

[0059] Step S1: Provide the 3D dynamic random access memory as described above;

[0060] Step S2: Supply power to the 3D dynamic random access memory, and the main control logic chip 21 in the 3D dynamic random access memory loads data into the volatile data storage device 30;

[0061] Step S3: When the memory is powered off, the power storage device 40 supplies power to the main control logic chip and connects the non-volatile memory 10 to the main control logic chip 21;

[0062] Step S4: the main control logic chip 21 drives to forward and copy the loaded data to the non-volatile memory 10.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a 3D (Three-dimensional) dynamic random access memory, which comprises multiple volatile data storage devices, a main control logic chip and an electric power storage device. An input end of the main control logic chip and the volatile data storage devices are electrically connected into a three-dimensional stack body; an output end of the main control logic chip is electrically connected with the volatile data storage devices; under the power supply of the electric power storage device, the main control logic chip is used for driving data downloaded from the volatile data storage devices to forward and copy to the volatile data storage devices. When the volatile data storage devices are powered off, the main control logic chip already stores the downloaded data into a nonvolatile memory in advance, so that the aim of data storage is achieved. The invention also discloses a data storage method of the 3D dynamic random access memory, wherein the data storage method has the technical effect.

Description

Technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a 3D dynamic random access memory, and also to a data storage method of the 3D dynamic random access memory. Background technique [0002] At present, DRAM (Dynamic Random Access Memory), that is, dynamic random access memory, is the most common system memory, and the read and write speed of DRAM is much faster than that of solid state drives. However, DRAM can only hold data for a short period of time. In order to retain data, DRAM uses capacitive storage to store data. This method must be refreshed every time. Data is saved every time it is refreshed. If DRAM If it is not refreshed, the stored information will be lost. When the DRAM is powered off, the DRAM cannot be refreshed, which will result in the loss of data in the DRAM. Another reason for easy data loss is that the current DRAM has a small capacity, which leads to easy data loss. [0003] Therefore, how to save ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/4074G11C5/02G06F3/06
Inventor 沈建宏
Owner CHANGXIN MEMORY TECH INC