Semiconductor device

Abstract

A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.

Description

technical field [0001] The present disclosure relates generally to a method for forming a stressor, a semiconductor having a stressor and a method for forming such a semiconductor, and more particularly, to a method of forming a stressor by an ion beam, having Semiconductors for stressors formed by ion beams and methods for forming such semiconductors. Background technique [0002] In semiconductor devices, strain engineering has been applied to improve electron / hole mobility. [0003] Existing methods for forming stressors within semiconductor materials typically require ion implantation masks, which further require photolithography processes in order to control the lateral location of the stressors to be formed. In this approach, individual independent control of the stressors including relative position, depth, size and doping concentration cannot be achieved because the stressors are formed simultaneously by the same implant. Contents of the invention [0004] One as...

AI Technical Summary

Problems solved by technology

In this method, individual independent control of the stressors including relative position, depth, size and doping concentration cannot be achieved because the stressors are formed simultaneously by the same implant

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