Polycrystalline silicon re-etching processing method

Abstract

The invention relates to a polycrystalline silicon re-etching processing method. The method includes the steps that a grid oxidization layer and a polycrystalline silicon layer are formed on a semiconductor substrate of a groove, a first oxidization layer is formed on the polycrystalline silicon layer and then cleaned away, and then the remaining polycrystalline silicon layer obtained after the first oxidization layer is removed is etched. Before polycrystalline silicon re-etching, an oxidizing medium or other contaminating substances on the polycrystalline silicon surface are removed by adopting the oxidation technology and the cleaning technology, polycrystalline silicon re-etching uniformity is improved, the problem of polycrystalline silicon residual is solved, the production yield ofsemiconductor products is increased, reliability of the semiconductor products is improved, and production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a polysilicon etching-back processing method. Background technique [0002] With the technological development of semiconductor devices, people have higher and higher requirements on the performance of semiconductor devices. [0003] In the production process of semiconductor devices, especially in the production process of trench semiconductor devices, the polysilicon etch back process is usually used. A good polysilicon etch back process directly affects the yield and reliability of semiconductor products. However, before polysilicon is etched back, there is often silicon dioxide or other contamination on the surface, resulting in polysilicon residues during the polysilicon etch-back process, which directly leads to increased leakage of semiconductor devices and lower yields, which in turn leads to Increase in production costs of semiconductor devices....

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a polysilicon etching-back treatment method. Before the polysilicon is etched back, an oxidation process and a cleaning process are used to remove the oxidizing medium or other contaminated substances on the surface of the polysilicon, so as to improve the uniformity of polysilicon etching back and solve the problem of polysilicon residue. problems, improve the production yield and reliability of products, and reduce production costs

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