Method and structure for forming a double-gate fin field effect transistor

Abstract

The invention discloses a method for effectively optimizing a fin type field-effect transistor structure, a fin type field-effect transistor prepared through the method and a formation method of the fn type field-effect transistor, wherein a plurality of gate dielectric layers are arranged in the vertical direction of a fin, and electric leakage on the bottom of an effective channel of the fin iseffectively reduced. According to the provided bigrid fin type field-effect transistor structure, a grid electrode is formed on the outer side face of the fin to serve as a control grid, another gridelectrode is formed on the inner side face of the fin to serve as a drive grid, the structure not only can reduce electric leakage on the bottom of the effective channel of the fin, by regulating thethickness of the control grid, the threshold voltage of the drive grid can be effectively changed, and the performance of the device also can be improved.

Description

technical field [0001] The invention relates to a semiconductor preparation process, in particular to a method and structure for forming a double gate fin field effect transistor. Background technique [0002] As the size of semiconductor devices becomes smaller and smaller, the short channel effect becomes more and more obvious. In order to suppress the short channel effect, a FinFET (Fin Field-Effect Transistor) formed on a silicon-on-insulator (SOI, Silicon-On-Insulator) wafer or a bulk semiconductor substrate is proposed. A FinFET includes a channel region formed in the middle of a fin (fin) of semiconductor material, and source / drain regions formed at both ends of the fin. The gate electrode surrounds the channel region on both sides of the channel region (ie a double gate structure), thereby forming an inversion layer on each side of the channel. Since the entire channel region can be controlled by the gate, it can play a role in suppressing the short channel effect....

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Problems solved by technology

[0004] However, in mass production, on the one hand, because the ion implantation process is difficult to distribute evenly in the vertical direction of the fin, there are differences between the upper and lower parts of the fin

On the other hand, the effective channel bottom leakage of fin is higher

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