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Wafer annealing treatment equipment and annealing treatment method

An annealing and wafer technology, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of long process cycle, long wafer annealing preheating time, and poor uniformity of wafer heating, and achieves improved uniformity. performance, shorten the heating time, and improve the output

Active Publication Date: 2020-11-27
淮安西德工业设计有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a wafer annealing treatment equipment and an annealing treatment method, which are used to solve the problems of long preheating time, poor wafer heating uniformity and Problems such as long process cycle

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  • Wafer annealing treatment equipment and annealing treatment method
  • Wafer annealing treatment equipment and annealing treatment method
  • Wafer annealing treatment equipment and annealing treatment method

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Embodiment Construction

[0048] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0049] see Figure 1 to Figure 4. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the shape, quantity and proportion of each component can be changed arbitrarily during actual implementation, and t...

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Abstract

The invention provides a wafer annealing treatment device and an annealing treatment method. The wafer annealing treatment device comprises a wafer storage device for storing wafers to be treated, a preheating device for receiving the wafers to be treated in the wafer storage device and heating the wafers to a first temperature, an annealing cavity for receiving the to-be-treated wafers with the first temperature in the preheating device and heating the wafers to an annealing temperature so as to conduct annealing treatment on the wafers to be treated, and a cooling device for receiving the to-be-treated wafers with the annealing temperature in the annealing cavity and cooling the wafers to a second temperature so as to complete annealing treatment. By adopting the scheme, the wafer annealing treatment device is provided with one preheating device, the heating time in the annealing cavity is shortened, and output is remarkably improved. The problems are avoided that the service life ofa heating lamp bulb is short and the replacement and maintenance frequency is high due to relatively large temperature difference during heating in the annealing cavity, the wafers are heated more evenly, and the problem of deformation in the wafer treatment process is relieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor structure processing technology and equipment, and in particular relates to a wafer annealing processing equipment and a wafer annealing processing method. Background technique [0002] In the integrated circuit manufacturing process, the common processing technology when annealing the wafer, especially, modern CMOS (Complementary Metal Oxide Semiconductor) and other chips will use rapid high temperature annealing (RTP, Rapid Thermal) after ion implantation. Processing) to complete defect repair and realize the regular arrangement of lattice. Usually, ion implantation will knock atoms out of the lattice structure and cause lattice damage. It must be heat treated at a high enough temperature to have electrical activity and eliminate implantation damage. Rapid thermal annealing is to use extremely fast heating and a certain target temperature. The duration of the wafer is processed. [0003]...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
CPCH01L21/67109H01L21/67115
Inventor 周颖吴宗祐林宗贤
Owner 淮安西德工业设计有限公司