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Multimode interference based silicon nitride light polarization beam splitter and preparation method thereof

A polarization beam splitter, multi-mode interference technology, applied in optics, instruments, optical components, etc., to achieve the effect of reducing return loss

Inactive Publication Date: 2018-03-06
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there have been a lot of research on multimode interference couplers for light with a wavelength of 1550 nm, and the single-photon band generated by the spontaneous parametric down-conversion method is mostly in the near-infrared band. As far as we know, no one has targeted the near-infrared Specific design parameters are given for the silicon nitride multimode interference polarization beam splitter for the band

Method used

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  • Multimode interference based silicon nitride light polarization beam splitter and preparation method thereof
  • Multimode interference based silicon nitride light polarization beam splitter and preparation method thereof
  • Multimode interference based silicon nitride light polarization beam splitter and preparation method thereof

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Embodiment 1

[0026] Such as figure 1 , 2 As shown, the silicon nitride optical polarization beam splitter based on multimode interference includes a waveguide beam splitter 1, an input waveguide 2, a phase shifter 3, a rectangular multimode interference waveguide 4, a first output waveguide 5 and a second output waveguide 6 , where the two output ends of the waveguide beam splitter 1 are respectively connected to one end of the input waveguide 2 and the input end of the phase shifter 3, and the output end of the phase shifter 3 and the other end of the input waveguide 2 are respectively connected to the rectangular multimode interference waveguide The two input ends of 4 are connected, and the two output ends of the rectangular multimode interference waveguide 4 are respectively connected with the first output waveguide 5 and the second output waveguide 6 .

[0027] In this embodiment, when the covering layer is air, the thickness of the waveguide beam splitter 1, the input waveguide 2, t...

Embodiment 2

[0034] Such as image 3 Shown is a schematic diagram of the preparation process of a silicon nitride optical polarization beam splitter based on multi-mode interference. Taking the thickness of the waveguide as 400 nm and the covering layer as air as an example, the specific process is as follows:

[0035] a) Deposit 400 nm thick silicon nitride 102 on the silicon dioxide substrate 101 .

[0036] b) Using electron beam lithography technology and reactive ion etching technology, prepare waveguide beam splitter 1, input waveguide 2, phase shifter 3, rectangular multimode interference waveguide 4, first output waveguide 5 and second output waveguide 6 , to obtain the optical polarization beam splitter 103.

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Abstract

The invention relates to multimode interference based silicon nitride light polarization beam splitter, which comprises a waveguide beam splitter, an input waveguide, a phase shifter, a rectangular multimode interference waveguide, a first output waveguide and a second output waveguide, wherein two output ends of the waveguide beam splitter are respectively connected with one end of the input waveguide and an input end of the phase shifter, an output end of the phase shifter and the other end of the input waveguide are respectively connected with two input ends of the rectangular multimode interference waveguide, and two output ends of the rectangular multimode interference waveguide are respectively connected with the first output waveguide and the second output waveguide.

Description

technical field [0001] The invention relates to an optical device, in particular to a silicon nitride optical polarization beam splitter based on multimode interference and a preparation method thereof, belonging to the field of optical devices. Background technique [0002] Silicon nitride is considered an ideal material for on-chip integrated optical circuits because it can be combined with existing mature CMOS processes. High-purity silicon nitride film can be epitaxially grown at low temperature and low pressure, and its production difficulty is lower than that of silicon film. The micromachining tolerance of silicon nitride waveguide is higher than that of silicon waveguide, and the loss of optical waveguide made of it is lower than that of silicon. And silicon nitride has a transparent bandwidth from visible light to mid-infrared, and is transparent to the wavelength of the most well-studied solid-state single-photon source. [0003] According to the principle of sel...

Claims

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Application Information

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IPC IPC(8): G02B27/28
CPCG02B27/283
Inventor 陈钰杰刘东宁罗世松孔嘉权张彦峰余思远
Owner SUN YAT SEN UNIV
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