Six-terminal network-type kilowatt-class radiofrequency power resistor

Abstract

The invention provides a six-terminal network-type kilowatt-class radiofrequency power resistor. The six-terminal network-type kilowatt-class radiofrequency power resistor comprises a flange plate andsubstrates, further comprises A surface electrodes, B surface electrodes and side surface electrodes, and further comprises medium protection layers, wherein the A surface electrodes are arranged onthe upper surfaces of the substrates; the B surface electrodes are arranged on the lower surfaces of the substrates; the side surface electrodes are arranged on the side surfaces of the substrates andare connected with the A surface electrodes and the B surface electrodes; resistor bodies are positioned on the A surface electrodes and are ensured to be stably overlapped with the overlapping endsof the A surface electrodes; the medium protection layers cover the resistor bodies and play a protective role; metal leads are welded to the A surface electrodes by a welding technology; packaging cover plates are adhered to the upper surfaces of the substrates through high-temperature adhesive. The six-terminal network-type kilowatt-class radiofrequency power resistor has the advantages as follows: by a principle of hierarchical derating, the three substrates bear certain power respectively, so that a phenomenon of heat accumulation caused by power concentration on a single substrate is avoided and the power bearing capability of the whole resistor is greatly improved; overall distribution parameters of the resistor are reduced, so that the frequency characteristics of the resistor are improved.

Description

technical field [0001] The invention relates to the field of resistors, in particular to a six-terminal network type kilowatt-level radio frequency power resistor. Background technique [0002] Manufacturing of ordinary radio frequency power resistors, including flange, substrate, B-side conductive film layer on the lower surface of the substrate, A-side electrode film layer on the upper surface of the substrate, and electrode film layer on the upper surface of the substrate and overlapped with the A-side electrode film layer The resistive film layer, the glass dielectric film layer on the upper surface of the substrate and covering the entire resistor body for protection, and the ceramic cover plate located on the outermost layer of the entire resistor to protect the integrity of the resistor. [0003] Traditional RF power resistors use a single substrate to carry the resistor body to absorb power, and the absorbed power is dissipated in the form of heat energy through the ...

AI Technical Summary

Problems solved by technology

With the increasing power requirements of radio frequency power resistors in modern broadcasting communication technology, the resistor body needs an increasingly larger area to absorb power, but when the power reaches the kilowatt level, simply increasing the area of ​​the resistor body cannot solve the problem of heat dissipation. The problem is that the heat will be concentrated in the center of the substrate to generate heat accumulation, which will cause the temperature in the center of the resistor body to rise sharply, resulting in thermal breakdown and causing the resistor to fail

And if the RF power resistor of a single substrate is to achieve the ability to absorb kilowatt-level power and cause heat accumulation at the same time, then the area of ​​the substrate and the resistor body must be very large. If the resistor body area is too large, it will bring too large parasitic parameters. If the substrate area is too large, it will be deformed due to uneven heating.

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