Semiconductor light-emitting element

Abstract

The invention discloses a semiconductor light-emitting element, which comprises a semiconductor stack with a first semiconductor layer, a second semiconductor layer and an active layer; a plurality of first grooves pass through the second semiconductor layer and the active layer to expose the first A semiconductor layer; a second trench passes through the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is close to an outermost side of the active layer and surrounds the active layer and a plurality of first trenches; a The patterned metal layer is located on the second semiconductor layer, and in one of the plurality of first trenches or in the second trench; and a first soldering portion and a second soldering portion are located on the second semiconductor layer, and are respectively electrically connected to the second semiconductor layer and the first semiconductor layer.

Description

technical field [0001] The invention relates to a structure of a semiconductor light emitting element. Background technique [0002] Light-emitting diodes (Light-emitting Diodes; LEDs) have been widely used in optical display devices, traffic signs, data storage devices, communication devices, lighting devices and medical equipment. Such as figure 2 As shown, the existing LED has an n-type semiconductor layer 1104, an active layer 1106 and a p-type semiconductor layer 1108 sequentially formed on a substrate 1102, part of the p-type semiconductor layer 1108 and the active layer 1106 are removed to A portion of the n-type semiconductor layer 1104 is exposed, and a p-type electrode a1 and an n-type electrode a2 are respectively formed on the p-type semiconductor layer 1108 and the n-type semiconductor layer 1104 . Since the n-type electrode a2 needs enough area to facilitate the subsequent manufacturing process, such as wire bonding, most of the active layer 1106 is removed, ...

AI Technical Summary

Problems solved by technology

Because the n-type electrode a2 needs enough area to facilitate subsequent manufacturing processes, such as wire bonding, most of the active layer 1106 is removed, resulting in reduced luminous efficiency

Images