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A kind of planar Gunn millimeter wave, terahertz power amplifier and its preparation method

A power amplifier, millimeter wave technology, applied in the direction of bulk negative resistance effect devices, electrical components, circuits, etc., can solve the problem of inability to realize the signal amplification function, and achieve the effect of simple structure and high gain

Inactive Publication Date: 2020-05-05
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the patent relates to an oscillator that generates an electromagnetic wave signal of a specific frequency when it works, and cannot amplify the signal

Method used

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  • A kind of planar Gunn millimeter wave, terahertz power amplifier and its preparation method
  • A kind of planar Gunn millimeter wave, terahertz power amplifier and its preparation method
  • A kind of planar Gunn millimeter wave, terahertz power amplifier and its preparation method

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Effect test

Embodiment 1

[0048] A planar Gunn millimeter-wave, terahertz power amplifier, such as figure 1 As shown, it includes substrate 1, buffer layer 2, channel layer 3, cap layer 4, ohmic contact electrode 5, and coplanar waveguide electrode 6 from bottom to top. The carrier concentration of channel layer 3 is 8×10 16 cm -3 , the length of the channel layer 3 is 4 μm, and the value of the product N of the carrier concentration of the channel layer 3 and the length of the channel layer 3 is 3.2×10 13 cm -2 .

[0049] The working principle of the planar Gunn power amplifier is that the differential negative resistance in the Gunn effect amplifies the AC signal. The carrier concentration of the channel layer 3 of the device, the length of the channel layer 3 and the product N of the carrier concentration and the length of the channel layer 3 all affect the power amplification performance of the device. An excessively low carrier concentration in the channel layer 3 will lead to an increase in d...

Embodiment 2

[0061] According to a kind of planar Gunn's millimeter wave and terahertz power amplifier described in embodiment 1, the difference is that the length of the channel layer 3 is 2 μm, and the carrier concentration of the channel layer 3 is equal to the length of the channel layer 3 The value of the product N is 1.6×10 13 cm -2 .

Embodiment 3

[0063] According to a kind of planar Gunn millimeter wave and terahertz power amplifier described in embodiment 1, the difference is that the length of the channel layer 3 is 6 μm, and the carrier concentration of the channel layer 3 is equal to the length of the channel layer 3 The value of the product N is 4.8×10 13 cm -2 .

[0064] figure 2 It is a schematic diagram of the power gain test result curves of power amplifiers with channel layer lengths of 2, 4 and 6 μm at frequencies of 6 to 67 GHz; image 3 It is a schematic diagram of the power gain test results curves of power amplifiers with channel layer lengths of 2, 4 and 6 μm at frequencies from 75 to 110 GHz; the peak gain reaches 17 dB, and the highest operating frequency exceeds 110 GHz. It reflects the high frequency and high gain characteristics of the power amplifier.

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Abstract

The invention relates to a planar Gunn's millimeter-wave and terahertz power amplifier and a preparation method thereof, which include a substrate, a channel layer and a coplanar waveguide electrode from bottom to top, and the carrier concentration of the channel layer is 1×10 14 ~1×10 17 cm ‑3 , the length of the channel layer is 1-10 μm, and the value range of the product N of the carrier concentration of the channel layer and the length of the channel layer is 1×10 11 cm ‑2 <N<1×10 14 cm ‑2 . The invention designs a Gunn power amplifier with a planar structure, the device has obvious negative differential resistance effect, and can realize power amplification from microwave to terahertz frequency. It is beneficial to the application of the planar Gunn device as a microwave or terahertz amplifier in microwave and terahertz communication, radar, imaging and other fields.

Description

technical field [0001] The invention relates to a planar Gunn's millimeter-wave and terahertz power amplifier and a preparation method thereof, in particular to a high-frequency, high-gain, and low-cost planar Gunn's diode amplifier, which belongs to the technical field of diodes in microwave devices. Background technique [0002] Solid-state millimeter wave and terahertz (30-3000GHz) power amplifiers have very important applications in many scientific and technological fields, such as high-speed broadband communications, medicine, radar, astronomy and security inspection. However, the current power amplifiers that can work at such high frequencies are mainly based on three-terminal devices such as high-mobility field-effect transistors (HEMTs) and bipolar heterojunction field-effect transistors (HBTs). The working frequency of HEMT is inversely proportional to the channel length. In order to realize that HEMT can work at the frequency of millimeter wave or even terahertz, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L47/02H01L47/00H10N80/10H10N80/00
CPCH10N80/01H10N80/107
Inventor 宋爱民王汉斌张翼飞王卿璞
Owner SHANDONG UNIV
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