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Silicon controlled rectifier (SCR) for ESD (Electro Static Discharge) protection

A silicon rectifier and low-trigger technology, applied in the direction of diodes, etc., can solve the problems of increasing power consumption, reducing the advantages of SCR strong ESD robustness, etc.

Active Publication Date: 2018-04-20
UNIV OF ELECTRONIC SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The research results show that when the maintenance voltage of LVTSCR is higher than the power supply voltage, the effects caused by various transients will be eliminated, but because the increase of voltage will increase the power consumption, the advantages of SCR's strong ESD robustness will be reduced

Method used

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  • Silicon controlled rectifier (SCR) for ESD (Electro Static Discharge) protection
  • Silicon controlled rectifier (SCR) for ESD (Electro Static Discharge) protection
  • Silicon controlled rectifier (SCR) for ESD (Electro Static Discharge) protection

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Embodiment 1

[0029] Such as figure 2 As shown, a silicon controlled rectifier for ESD protection includes: p-type substrate 01, nwell region 02 implanted on the p-type substrate, pwell region 03 tangent to the right edge of nwell region 02, and nwell region 03 The first N+ contact region 11 implanted on the surface of region 02, the first P+ region 21 tangent to the right edge of the first N+ contact region 11; the first N+ contact region 11 and the first P+ region 21 constitute an N+P+ region unit, The first N+ contact region 11 and the surface of the first P+ region 21 are short-circuited with metal to form the device anode 31; it also includes the second P+ region 22 implanted on the surface of the pwell region 03 and tangent to its right edge, and the second P+ region 22 The second N+ contact region 12 whose left edge is tangent, the adjacent second P+ region 22 and the second N+ contact region 12 form a P+N+ region unit, and the second N+ contact region 12 and the second P+ region 22...

Embodiment 2

[0045] Such as image 3 As shown, the difference between this embodiment and Embodiment 1 is that: more than one P+N+ region unit is included in the pwell region 03 . The N+ area in any one of the P+N+ area units is tangent to the P+ area, and the two adjacent P+N+ area units are tangent; the second N+ contact area 12 and the rightmost The second P+ region 22 on the side is connected to form the cathode 32 of the device. By adding N+ / P+ repeating units, the vertical emission capability of the npn tube can be changed.

Embodiment 3

[0047] Such as Figure 4 As shown, the silicon controlled rectifier used for ESD protection in this embodiment includes a p-type substrate 01, an nwell region 02 formed by implantation on the p-type substrate, a pwell region 03 tangent to the right edge of the nwell region 02, The second P+ region 22 implanted on the surface of the pwell region 03 tangent to its right edge, the second N+ contact region 12 tangential to the left edge of the second P+ region 22, the adjacent second P+ region 22 and the second N+ contact The region 12 constitutes a P+N+ region unit, and the second N+ contact region 12 and the second P+ region 22 are connected to form a device cathode 32;

[0048] The first N+ contact region 11 implanted on the surface of the nwell region 02 is tangent to its left edge, the first P+ region 21 is tangent to the right edge of the first N+ contact region 11, the adjacent first N+ contact region 11 and the first The P+ area 21 constitutes an N+P+ area unit, and the n...

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Abstract

The invention provides a silicon controlled rectifier (SCR) for ESD (Electro Static Discharge) protection. The SCR comprises a p-type substrate, an nwell region, a low triggering region spanning a junction of the nwell region and a pwell region, at least one N+P+ region unit set on the surface of the nwell region and at least one P+N+ region unit set on the surface of the pwell region. An N+ region and a P+ region in any N+P+ region unit are tangent. Two adjacent N+P+ region units are tangent. One side of the low triggering region and the right side of the rightmost P+ region in the at least one N+P+ region unit are tangent, or the one side of the low triggering region and the left side of the leftmost P+ region in the at least one N+P+ region unit are tangent. The low triggering region isnot tangent to the N+P+ region unit and the P+N+ region unit at the same time. The SCR cathode optimization structure for ESD provided by the invention has the obvious advantage of maximizing currentcapacity and resisting a Latch-up effect.

Description

technical field [0001] The invention belongs to the field of electronic science and technology, and is mainly used for the protection technology of Electro Static Discharge (ESD for short). Further speaking, it is a method of optimizing the cathode injection of the SCR structure, increasing the sustaining voltage by increasing the parasitic discharge path, and related device structures. Background technique [0002] ESD stands for Electrostatic Discharge, which is an ancient natural phenomenon. ESD exists in every corner of people's daily life. But it is such a common electrical phenomenon that is a fatal threat to sophisticated integrated circuits. [0003] With the improvement of integrated circuit manufacturing technology, its minimum line width has dropped to sub-micron or even nanometer level. While improving chip performance, its anti-ESD ability has also been greatly reduced, while the environment in which the device is used has not changed. , so static damage to I...

Claims

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Application Information

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IPC IPC(8): H01L29/87
CPCH01L29/87
Inventor 乔明齐钊肖家木王正康毛焜张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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