A method of changing the depth of the heavy ion Bragg peak to test the single event effect cross section of the device
A single event effect, depth testing technology, applied in the direction of instruments, measuring electricity, measuring devices, etc., can solve the problems that are not involved, and achieve the effect of reducing damage and improving utilization efficiency
Active Publication Date: 2019-12-27
NORTHWEST INST OF NUCLEAR TECH
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Neither of these two patents involves the method of using a single type of high-energy heavy ions to obtain a single-event effect cross section of a device with multiple LET values
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0032] Taking a static memory circuit as an example below, the specific implementation of the present invention will be described in conjunction with the accompanying drawings. The following examples are only used to illustrate the present invention, but are not used to limit the scope of the present invention.
[0033] figure 1 It is a flowchart of a method for changing the single event effect cross-section of the heavy ion Bragg peak depth test device of the present invention, combined with figure 1 , to describe this method in detail.
[0034] S1] Based on the selection of Kr ions in the Lanzhou Heavy Ion Cyclotron, the energy is 2100 MeV, and the energy per nucleon is 25 MeV. The curve of the LET value of Kr ions in silicon with the penetration depth is calculated, and the depth position d1 of the Bragg peak is recorded as 312 microns.
[0035] S2] Insert a certain thickness energy-reduced sheet in front of the silicon. According to the energy level of the accelerator, al...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method for testing the single event effect cross section of a device by changing the depth of a heavy ion Bragg peak. The method comprises: calculating the equivalent depth of an energy-reducing sheet material per unit depth in silicon at the same energy loss; according to a certain step length, removing an energy-reducing sheet placed in front of the device in order thatthe Bragg peak gradually shifts to the sensitive area of the device, and a LET value and the single event effect cross section reach maximum values; continuously removing the energy-reducing sheet according to the set step length, based on the changing curve of the LET value of heavy ions with penetration depth in the silicon, reading the corresponding LET value at the sensitive area of the device; and drawing a relation curve between the single event effect cross section and the LET value at the heavy ions. The method acquires the single event effect cross section of new devices such as encapsulation devices and backside thinning devices, compensates for the influence caused by the low energy and insufficient range of a heavy ion accelerator, and can accurately obtain the device's singleevent effect threshold through testing, and is an effect test method for accurate evaluation of the device's ability to resist single event.
Description
technical field [0001] The invention relates to a method for changing the single-event effect cross-section of a heavy ion Bragg peak depth test device, and belongs to the research field of space single-event effect simulation test technology and reinforcement technology. Background technique [0002] In the space radiation environment, heavy ions and protons cause single event effects in the semiconductor devices in the spacecraft electronic system, seriously affecting the reliability of the spacecraft in orbit. The most commonly used method for simulating single event effects on the ground is to irradiate semiconductor devices with heavy ions generated by accelerators, obtain and fit the relationship curve between device single event effect cross section and LET value, and extract important parameters such as single event effect threshold and saturation cross section. In order to evaluate the anti-single event capability of the device. [0003] Among ground-based heavy io...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00
CPCG01R31/00
Inventor 罗尹虹陈伟张凤祁郭红霞潘霄宇
Owner NORTHWEST INST OF NUCLEAR TECH