a boost sb 2 te 3 Methods for thermoelectric properties of base materials

A thermoelectric performance and base material technology, which is applied in the field of improving the thermoelectric performance of Sb2Te3 base materials, can solve the problems that the performance and process cannot meet the actual application requirements, and achieve the effects of optimizing electrical transmission performance, improving thermoelectric performance, and enhancing phonon scattering

Active Publication Date: 2020-12-22
HEFEI UNIV OF TECH
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Problems solved by technology

However, the currently prepared P-type Sb 2 Te 3 The performance and process of base thermoelectric materials still cannot meet the needs of practical applications, so how to effectively improve their thermoelectric performance is still one of the focuses of current research

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  • a boost sb <sub>2</sub> te <sub>3</sub> Methods for thermoelectric properties of base materials
  • a boost sb <sub>2</sub> te <sub>3</sub> Methods for thermoelectric properties of base materials
  • a boost sb <sub>2</sub> te <sub>3</sub> Methods for thermoelectric properties of base materials

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Embodiment Construction

[0036] A raised Sb 2 Te 3 The method for the thermoelectric performance of the base material, the specific steps are as follows:

[0037] (1) Bi 2 Te 3 , Sb 2 Te 3 The ingot is crushed into particles with a particle size of 2 to 5mm; then it is vacuum ball-milled on a planetary ball mill to form a powder with a particle size of several hundred nanometers to several microns, and the shape is as follows image 3 shown;

[0038] Among them, the ball milling process on the planetary ball mill is as follows: the ball-to-material ratio is 8:1, the speed is 450rpm, and the speed ratio is 2:1. Both the grinding pot and the balls are A-grade agate. -0.5MPa.

[0039] Bi 2 Te 3 , Sb 2 Te 3 The ingot preparation method is as follows:

[0040] According to Bi 2 Te 3 , Sb 2 Te 3 Stoichiometric ratio Weigh 30g of Bi, Te, Sb pure component particles in a ceramic crucible, and cover 5gB 2 o 3 Protect; prepare Bi by melting in SK2 type box-type resistance furnace 2 Te 3 , Sb...

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Abstract

The present invention relates to a kind of lifting Sb 2 Te 3 A method for the thermoelectric properties of base materials by adding p-type Sb 2 Te 3 Introducing N-type Bi into thermoelectric materials 2 Te 3 , forming a PN junction to enhance the Sb 2 Te 3 The thermoelectric properties of the base material can be adjusted by adjusting the ratio of the two phases to control the concentration of the PN junction in the material base. When Bi 2 Te 3 with Sb 2 Te 3 When the stoichiometric ratio is 0.15:0.85, the material has the best electrical properties, and the maximum PF is 26.34μW K at 328K ‑2 cm ‑1 ; At the same time, due to the scattering of carriers and phonons by the PN junction, the thermal conductivity of the material is significantly reduced, and the thermal conductivity is 0.89W m at 451K ‑1 K ‑1 ; Therefore, the sample has the best thermoelectric performance, ZT at 401K max up to 1.03 (compared with pure phase Sb 2 Te 3 increased by 25.6%), while obtaining the largest ZT in the entire test temperature range (300-550K) ave =0.89 (compared with pure phase Sb 2 Te 3 increased by 40.2%).

Description

technical field [0001] The invention belongs to the technical field of thermoelectric material preparation, in particular to a method for promoting Sb 2 Te 3 A method for the thermoelectric properties of base materials. Background technique [0002] With the continuous development of the global economy, the traditional primary fossil energy is increasingly exhausted, and the environmental pollution caused by excessive use and improper post-processing is becoming more and more serious. Therefore, the development of clean energy and new energy materials has attracted widespread attention. [0003] Thermoelectric materials are functional materials that directly convert thermal energy and electrical energy through the transport of carriers in solids. Thermoelectric power generation or thermoelectric refrigeration devices made with thermoelectric materials as the core have the advantages of no noise, no pollution, low maintenance costs, long service life, small size, etc., and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34
CPCH10N10/01
Inventor 祖方遒王小宇黄中月孙超许飞孙志豪徐亮
Owner HEFEI UNIV OF TECH
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