Polysilicon filling method
A filling method and polysilicon technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of poor surface morphology, poor filling effect, and deep pits of fillers, etc., to ensure the surface morphology , improve the filling effect, improve the effect of performance
Inactive Publication Date: 2020-09-01
江苏清联光电技术研究院有限公司
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Problems solved by technology
However, in the process of filling trenches with polysilicon as fillers and etching back the fillers, the following phenomenon often occurs: the filling effect of the fillers is poorer for trenches with larger opening sizes, and the filling After the object is etched back, the surface morphology of the filling will be worse, such as deep pits, etc.
Therefore, the above-mentioned problems for wide-sized trenches will bring a series of difficulties to subsequent processes
Method used
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[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0020] In order to solve the problem of poor polysilicon filling effect of wide-sized trenches in the prior art and easy pits after etching back, the present invention provides a polysilicon filling method. Silicon is etched to form silicon dioxide sidewalls, so that the trench is narrowed, and then filled with polysilicon, and then the silicon dioxide in the trench is etched away and filled with polysilicon for the second time, thereby improving the filling effect of polysilicon and Therefore, pits will not be gener...
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Abstract
The invention provides a polysilicon filling method. The polysilicon filling method includes the steps: performing silica filling in a wide size groove to form a silicon dioxide layer; performing incomplete etchback processing on the silicon dioxide layer so as to enable the silicon substrate at the bottom of the wide size groove to be exposed and form a silica side wall in the wide size groove; performing the first time of polysilicon filling in the wide size groove to form a first polysilicon layer; performing etchback on the first polysilicon layer which maintains a polysilicon column encircled by the silica side wall after the first polysilicon layer is etched back; removing the silica side wall in the wide size groove; and performing the second time of polysilicon filling in the widesize groove to form a second polysilicon layer which encircles the polysilicon column; and performing etchback on the second polysilicon layer.
Description
【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a polysilicon filling method suitable for wide trenches. 【Background technique】 [0002] In the manufacture of semiconductor chips, it is often necessary to fill trenches and etch back the fillings. However, in the process of filling trenches with polysilicon as fillers and etching back the fillers, the following phenomenon often occurs: the filling effect of the fillers is poorer for trenches with larger opening sizes, and the filling After the object is etched back, the topography of the filling surface becomes worse, such as deep pits appear. Therefore, the above-mentioned problems for wide-sized trenches will bring a series of difficulties to subsequent processes. [0003] In view of this, it is necessary to provide a polysilicon filling method to solve the above-mentioned problems in the prior art. 【Content of invention】 [0004] One object of...
Claims
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IPC IPC(8): H01L21/02
CPCH01L21/02381H01L21/02532H01L21/02595
Inventor 不公告发明人
Owner 江苏清联光电技术研究院有限公司