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rf power package with planar tuned lines

A packaging and planar technology, applied in the direction of amplifiers with distributed constants in the coupling network, parts of amplifiers, amplifiers with semiconductor devices/discharge tubes, etc., can solve the problem of expensive, difficult chip performance, and expensive wire bonding materials And other issues

Active Publication Date: 2021-03-09
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Achieving and maintaining consistent bonding and thus performance across many parts / wafers is difficult and expensive, and low loss wire bonding materials such as gold are expensive

Method used

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  • rf power package with planar tuned lines
  • rf power package with planar tuned lines
  • rf power package with planar tuned lines

Examples

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Embodiment Construction

[0016] Embodiments of RF power packages are described next, where conventional wirebond based impedance matching / transformation eg for high power transistors is replaced by planar tuning lines printed in the metallization of the substrate (carrier). The impedance matching / transformation required for a particular RF power package is optically defined, which is cheaper to implement and provides better consistency / accuracy than wire bonding. Optical circuit printing technology is well established so that special precision wire bonding equipment and assembly processes are no longer required to achieve the desired impedance matching / transformation. Both signal / power routing and desired impedance matching / transformation between packaged components are achieved by optically defined planar tuned lines.

[0017] figure 1 shows a top view of an embodiment of an RF power package, figure 2 A perspective view of the package is shown. The RF power package includes a substrate 100 having...

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PUM

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Abstract

RF power packages with planar tuning lines are disclosed herein. The RF power package includes: a substrate having a metallized portion and an insulating portion; an RF power transistor die embedded in or attached to the substrate, the RF power transistor die having a die input terminal, a die output terminal, Input and output impedances; package input terminals formed in the metallized portion of the substrate or attached to an insulating portion of the substrate; packages formed in the metallized portion of the substrate or attached to an insulating portion of the substrate and a first plurality of planar tuning lines formed in the metallization of the substrate and electrically connecting the die output terminals to the package output terminals. The first plurality of planar tuning lines are shaped to transform the output impedance at the output terminals of the die to a higher target level at the output terminals of the package.

Description

technical field [0001] This application relates to RF power packages, and more particularly to RF power packages with tuned lines. Background technique [0002] Impedance matching is required in RF power packages to move the very low impedance of the power transistors to a higher impedance for customer matching. Wire bonding is often used for impedance matching / transformation by changing the impedance to a different level. Wire bonding is complex and expensive to implement, especially for the tight tolerances required for low impedance matching. Wire bonding also requires special precision equipment and assembly procedures. Achieving and maintaining consistent bonding and thus performance over many parts / wafers is difficult and expensive, and low loss wire bonding materials such as gold are expensive. Therefore, alternative impedance matching / transformation solutions for RF power packages are needed. Contents of the invention [0003] According to an embodiment of an R...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/66
CPCH01L23/66H01L2223/6655H01L2223/6605H03F3/60H01L22/12H01L22/14H01P5/028H01L22/20H01L23/5389H01L25/072H01L2223/6627H03F1/0288H03F2200/451H03H7/38H01L24/80H01L23/48H01L21/4846H01L23/49822H01L23/49838H01L23/49866H01L25/50H01L2223/6661H01P3/081H03F3/19H03F3/211H03F2200/222H03F2200/255H03F2200/387H03F2200/423H03F2203/21103H03F2203/21139
Inventor M·希姆科
Owner INFINEON TECH AG
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