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A three-dimensional electromagnetic microscopy device and method for power semiconductor materials

A power semiconductor, three-dimensional electromagnetic technology, applied in the direction of electronic circuit testing, etc., can solve the problem of no chip three-dimensional microscopic means, and achieve the effect of comprehensive failure analysis and impurity detection

Active Publication Date: 2019-09-24
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is currently no 3D microscopy method for chips

Method used

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  • A three-dimensional electromagnetic microscopy device and method for power semiconductor materials

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Effect test

Embodiment 1

[0030] like figure 1 A three-dimensional electromagnetic microscopy device for power semiconductor materials is shown, including a signal generating unit 1, a feed network 2, a dual directional coupler 3, a first receiver 4, a second receiver 5, and a transmission line coupling metal probe 6;

[0031] The signal generating unit 1 is configured to generate a frequency-sweeping microwave signal or a microwave signal of a specific frequency, and its output end is connected to the input end of the feeding network 2;

[0032] The feed network 2 is configured to complete the matching transformation of the microwave transmission impedance, and its output end is connected to the input end of the dual directional coupler 3;

[0033] The dual directional coupler 3 is configured to send the microwave signals in the microwave link to the first receiver 4 and the second receiver 5 according to their respective propagating directions, and their input ends are connected to The feed network ...

Embodiment 2

[0039] On the basis of the above embodiments, the present invention also mentions a three-dimensional electromagnetic microscopy method for power semiconductor materials, which specifically includes the following steps:

[0040] Step 1: The signal generation unit generates a frequency-sweeping microwave signal, denote the frequency of the microwave signal as f, and loads it into the feeding network;

[0041] Step 2: The feed network matches the transmission impedance of the microwave link;

[0042] Step 3: The first receiver detects the microwave signal transmitted from the feeding network direction to the transmission line coupling metal probe, and calculates the power P_0(f) and phase Fai_0(f) of the microwave signal;

[0043]Step 4: The microwave signal is loaded to the transmission line coupling metal probe through the dual directional coupler, and the probe tip of the transmission line coupling metal probe is coupled with the power semiconductor material to generate a ref...

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Abstract

The invention discloses a three-dimensional electromagnetic microscope device and method for power semiconductor materials, which belong to the field of material testing. Probe; the signal generating unit generates a frequency-sweeping microwave signal and loads it into the feed network to match the transmission impedance of the microwave link, and the first receiver detects and calculates the power and phase of the microwave signal transmitted from the feed network direction to the metal coupling probe of the transmission line, The microwave signal is loaded to the transmission line coupling metal probe through the double directional coupler, and is coupled with the power semiconductor material to generate a reflected signal. The second receiver receives and calculates the power and phase of the reflected signal, and obtains the impulse response to the microwave signal inside the power semiconductor. , each point scanned by the transmission line coupled metal probe repeats the above operation, that is, the three-dimensional electromagnetic microscopic imaging of the power semiconductor material is completed. The present invention allows evaluation inside power semiconductors.

Description

technical field [0001] The invention belongs to the field of material testing, and in particular relates to a three-dimensional electromagnetic microscopic device and method for power semiconductor materials. Background technique [0002] At present, after tape-out of chips such as microwave power semiconductors, in the defect detection process, high-resolution microscopy is generally used: one is on-wafer high-resolution optical microscopy, but it can only give The optical properties of the surface; the second is the microscopic method of the electron microscope, which has the advantage of high resolution; and the atomic force microscope, which shows the topographical characteristics of the surface. There are currently no 3D microscopy methods for chips. Contents of the invention [0003] Aiming at the above-mentioned technical problems existing in the prior art, the present invention proposes a three-dimensional electromagnetic microscopic device and method for power se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/28
Inventor 杨保国年夫顺梁胜利王尊峰李树彪唐波
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP