Unlock instant, AI-driven research and patent intelligence for your innovation.

Power semiconductor material three-dimensional electromagnetic microscopic device and method

A power semiconductor, three-dimensional electromagnetic technology, applied in the direction of electronic circuit testing, etc., can solve the problem of no chip three-dimensional microscopic method, and achieve the effect of comprehensive failure analysis and impurity detection.

Active Publication Date: 2018-05-29
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is currently no 3D microscopy method for chips

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power semiconductor material three-dimensional electromagnetic microscopic device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as figure 1 A three-dimensional electromagnetic microscopy device for power semiconductor materials is shown, including a signal generating unit 1, a feed network 2, a dual directional coupler 3, a first receiver 4, a second receiver 5, and a transmission line coupling metal probe 6;

[0031] The signal generating unit 1 is configured to generate a frequency-sweeping microwave signal or a microwave signal of a specific frequency, and its output end is connected to the input end of the feeding network 2;

[0032] The feed network 2 is configured to complete the matching transformation of the microwave transmission impedance, and its output end is connected to the input end of the dual directional coupler 3;

[0033] The dual directional coupler 3 is configured to send the microwave signals in the microwave link to the first receiver 4 and the second receiver 5 according to their respective propagating directions, and their input ends are connected to The feed netwo...

Embodiment 2

[0039] On the basis of the above embodiments, the present invention also mentions a three-dimensional electromagnetic microscopy method for power semiconductor materials, which specifically includes the following steps:

[0040] Step 1: The signal generation unit generates a frequency-sweeping microwave signal, denote the frequency of the microwave signal as f, and loads it into the feeding network;

[0041] Step 2: The feed network matches the transmission impedance of the microwave link;

[0042] Step 3: The first receiver detects the microwave signal transmitted from the feeding network direction to the metal coupling probe of the transmission line, and calculates the power P_0(f) and phase Fai_0(f) of the microwave signal;

[0043]Step 4: The microwave signal is loaded to the transmission line coupling metal probe through the dual directional coupler, and the probe tip of the transmission line coupling metal probe is coupled with the power semiconductor material to generat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a power semiconductor material three-dimensional electromagnetic microscopic device and method and belongs to the material test field. The device includes a signal generating unit, a feeding network, a bi-directional coupler, a first receiver, a second receiver and a transmission line coupling metal probe; the signal generating unit generates sweep frequency microwave signals and applies the sweep frequency microwave signals to the feeding network; the feeding network matches the transmission impedance of a microwave link; the first receiver detects and calculates the power and phase of microwave signals transmitted from the feeding network to the transmission line coupling metal probe; the microwave signals are loaded to the transmission line coupling metal probe through the bi-directional coupler; the microwave signals are coupled with the material of a power semiconductor, so that reflection signals are generated; the second receiver receives and calculates the power and phase of the reflection signals so as to obtain the impulse response of the interior of the power semiconductor to the microwave signals; and each point on the transmission line couplingmetal probe repeats the above operation, and therefore, the three-dimensional electromagnetic microscopic imaging of the power semiconductor material is completed. The device and method of the presentinvention can evaluate the interior of the power semiconductor.

Description

technical field [0001] The invention belongs to the field of material testing, and in particular relates to a three-dimensional electromagnetic microscopic device and method for power semiconductor materials. Background technique [0002] At present, after tape-out of chips such as microwave power semiconductors, in the defect detection process, high-resolution microscopy is generally used: one is on-wafer high-resolution optical microscopy, but it can only give The optical properties of the surface; the second is the microscopic method of the electron microscope, which has the advantage of high resolution; and the atomic force microscope, which shows the topographical characteristics of the surface. There are currently no 3D microscopy methods for chips. Contents of the invention [0003] Aiming at the above-mentioned technical problems existing in the prior art, the present invention proposes a three-dimensional electromagnetic microscopic device and method for power se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28
Inventor 杨保国年夫顺梁胜利王尊峰李树彪唐波
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP