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Polarization-insensitive electro-optic modulator based on transparent conductive oxide

A polarization-insensitive, electro-optic modulator technology, applied in instruments, optics, nonlinear optics, etc., can solve the problem of different modulation depths, achieve the effect of large modulation depth, small size, and enhanced interaction

Active Publication Date: 2018-06-01
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although there are some that can realize simultaneous modulation of TE mode and TM mode, the modulation depths of the two polarization directions are different, which puts forward higher requirements for polarization control in applications.

Method used

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  • Polarization-insensitive electro-optic modulator based on transparent conductive oxide
  • Polarization-insensitive electro-optic modulator based on transparent conductive oxide
  • Polarization-insensitive electro-optic modulator based on transparent conductive oxide

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Embodiment Construction

[0024] In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

[0025] This embodiment discloses a polarization-insensitive electro-optic modulator based on transparent conductive oxide, its structure is as follows figure 1 As shown, the base layer 1 is included, and the base layer 1 is provided with a silicon waveguide layer 2. The silicon waveguide layer 2 is a ridge waveguide, and its upper surface is provided with a plurality of dielectric layers. For the convenience of expression, this embodiment is called n The dielectric layer covers the first dielectric layer 5, the transparent conductive oxide layer 4, the second dielectric layer 6, and the silicon layer 8 sequentially from bottom to top, thereby alternating to the nth dielectric layer 7, obviously on the nth dielectric layer 7 The surface is the topmost layer, w...

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Abstract

The invention discloses a polarization-insensitive electro-optic modulator based on transparent conductive oxide. The modulator comprises a basal layer and a silicon waveguide layer arranged on the basal layer, and multiple dielectric layers are arranged on the upper surface of the silicon waveguide layer; from the adjacent dielectric layer of the silicon waveguide layer, transparent conductive oxide layers are arranged on the upper surfaces of all of the odd dielectric layers, and silicon layers are arranged on the upper surfaces of all of the even dielectric layers; first electrodes are arranged on the silicon waveguide layer and the silicon layers, and second electrodes are arranged on the transparent conductive oxide layers. According to the modulator, a multi-layer MOS capacitive structure is adopted, so that polarization insensitive is achieved.

Description

technical field [0001] The invention relates to the fields of optical communication, optical interconnection and optical device integration, in particular to a polarization-insensitive electro-optic modulator based on transparent conductive oxide (Transparent-Conducting-Oxide, TCO). Background technique [0002] In future optical interconnection and optical communication chips, optoelectronic integrated circuits (PICs) with high capacity, compact size and low cost will become people's first choice. There are several ways to increase capacity, among which polarization multiplexing is an effective solution because it can double the communication capacity. However, most electro-optical modulators are polarization-sensitive. At present, the implementation of polarization multiplexing optical communication systems generally requires dividing the polarization beam splitter into TE and TM modes, and then using a polarization rotator or wave plate to convert the TE(TM) mode into Th...

Claims

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Application Information

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IPC IPC(8): G02F1/01
CPCG02F1/011G02F1/0113
Inventor 仇晓明李艳萍张帆
Owner PEKING UNIV
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