Finfet and methods of forming finfet

Abstract

An embodiment is a method including recessing a gate electrode over a semiconductor fin on a substrate to form a first recess from a top surface of a dielectric layer, forming a first mask in the first recess over the recessed gate electrode, recessing a first conductive contact over a source / drain region of the semiconductor fin to form a second recess from the top surface of the dielectric layer, and forming a second mask in the second recess over the recessed first conductive contact. The invention relates to FINFET and methods of forming FINFET.

Description

technical field [0001] Embodiments of the present invention relate to FINFETs and methods of forming FINFETs. Background technique [0002] As the semiconductor industry has moved into nanotechnology process nodes in pursuit of higher device densities, higher performance, and lower costs, challenges from manufacturing and design issues have led to the development of three-dimensional designs such as Fin Field Effect Transistors (FinFETs). . Typical FinFETs are fabricated with thin vertical "fins" (or fin structures) extending from the substrate formed by, for example, etching away portions of a silicon layer of the substrate. The channel of the FinFET is formed in this vertical fin. A gate is provided over the fin (eg, wrapping the fin). Having the gate on both sides of the channel allows the gate to control the channel from both sides. However, there are challenges in implementing such components and processes in semiconductor fabrication. SUMMARY OF THE INVENTION ...

AI Technical Summary

Problems solved by technology

However, the challenge is to implement such components and processes in semiconductor manufacturing

Images