Finfets and methods of forming finfets

Abstract

One embodiment is a method comprising recessing a gate electrode over a semiconductor fin on a substrate to form a first recess from a top surface of a dielectric layer, in the first recess over the recessed gate electrode forming a first mask, recessing the first conductive contact over the source / drain region of the semiconductor fin to form a second recess from the top surface of the dielectric layer, and over the recessed first conductive contact A second mask is formed in the second groove. Embodiments of the invention relate to FINFETs and methods of forming FINFETs.

Description

technical field [0001] Embodiments of the invention relate to FINFETs and methods of forming FINFETs. Background technique [0002] As the semiconductor industry has moved into nanotechnology process nodes in pursuit of higher device density, higher performance, and lower cost, challenges from manufacturing and design issues have led to the development of three-dimensional designs such as Fin Field Effect Transistors (FinFETs) . Typical FinFETs are fabricated with thin vertical "fins" (or fin structures) extending from a substrate formed by, for example, etching away portions of the silicon layer of the substrate. In this vertical fin the channel of the FinFET is formed. A gate is provided over (eg, surrounding) the fins. Having the gate on both sides of the channel allows the gate to control the channel from both sides. However, there are challenges in implementing such components and processes in semiconductor manufacturing. Contents of the invention [0003] Accord...

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Problems solved by technology

However, the challenge is to implement such components and processes in semiconductor manufacturing

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