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An integrated uranium nitride thermoelectric conversion device

A thermoelectric conversion device, nitride technology, applied in thermoelectric device junction lead-out materials, thermoelectric devices using only Peltier or Seebeck effect, etc., can solve the problems of low conversion efficiency and application requirements, small contact area, etc. The effect of light damage, prolonging service life, reducing volume and weight

Active Publication Date: 2021-05-07
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The space required to accommodate two materials in the common structure makes the contact area small and the conversion efficiency low, which cannot meet the application requirements

Method used

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  • An integrated uranium nitride thermoelectric conversion device
  • An integrated uranium nitride thermoelectric conversion device
  • An integrated uranium nitride thermoelectric conversion device

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Experimental program
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Effect test

Embodiment 1

[0029] The present invention is realized through the following technical solutions, as Figure 1-Figure 3 As shown, an integrated uranium nitride thermoelectric conversion device includes a housing 1 and a thermoelectric conversion device installed on the housing 1 and has a self-heating function; the thermoelectric conversion device includes a conversion module; the conversion module includes The first conductive sheet 2, the N-type semiconductor and the P-type semiconductor respectively arranged on both ends of the first conductive sheet 2, and two second conductive sheets 4 respectively connected to the N-type semiconductor and the P-type semiconductor;

[0030] The N-type semiconductor and the P-type semiconductor have the same structure, and are equally divided into a high fission concentration region 31 connected to the first conductive sheet 2 and having a self-heating function, and a low fission concentration region 32 connected to the second conductive sheet 4 .

[00...

Embodiment 2

[0039] This embodiment is further optimized on the basis of the above embodiments, such as Figure 1-Figure 3 As shown, further, in order to better realize the present invention, the number of the conversion modules is multiple and ring-connected to form a thermoelectric conversion unit; adjacent conversion modules share a second conductive sheet 4; adjacent conversion modules pass The second conductive sheet 4 is connected, that is, the second conductive sheet 4 is simultaneously connected to the N-type semiconductor of one conversion module and the P-type semiconductor of the other conversion module.

[0040] Further, in order to better realize the present invention, the number of the thermoelectric conversion units is multiple and uniformly distributed along the axial direction of the casing 1 .

[0041] Further, in order to better realize the present invention, the high fission concentration region 31 and the low fission concentration region 32 are made of uranium nitride ...

Embodiment 3

[0047] This embodiment is the best embodiment of the present invention, as Figure 1-Figure 3 As shown, an integrated uranium nitride thermoelectric conversion device includes a housing 1 and a thermoelectric conversion device installed on the housing 1 and has a self-heating function; the thermoelectric conversion device includes a conversion module; the conversion module includes The first conductive sheet 2, the N-type semiconductor and the P-type semiconductor respectively arranged on both ends of the first conductive sheet 2, and two second conductive sheets 4 respectively connected to the N-type semiconductor and the P-type semiconductor;

[0048] The N-type semiconductor and the P-type semiconductor have the same structure, and are equally divided into a high fission concentration region 31 connected to the first conductive sheet 2 and having a self-heating function, and a low fission concentration region 32 connected to the second conductive sheet 4 .

[0049] The numb...

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Abstract

The invention discloses an integrated uranium nitride thermoelectric conversion device, which includes a casing and a thermoelectric conversion device installed on the casing and having a self-heating function; the thermoelectric conversion device includes a conversion module; the conversion module includes a first conductive sheet, The N-type semiconductor, the P-type semiconductor and two second conductive sheets respectively connected to the N-type semiconductor and the P-type semiconductor; the N-type semiconductor and the P-type semiconductor have the same structure and are divided into a high fission concentration area and a low fission concentration area. The present invention selects uranium nitride as the heat source and thermoelectric conversion material at the same time, reduces the volume and weight of the conversion module, and improves the energy efficiency of the entire thermoelectric conversion device; Timely and stable release of heat energy is an ideal heat source in thermoelectric conversion devices; the integration of thermoelectric material transduction components and radioactive heat sources can effectively avoid radiation damage of thermoelectric materials and prolong the service life of thermoelectric devices.

Description

technical field [0001] The invention relates to the technical field of thermoelectric conversion, in particular to an integrated uranium nitride thermoelectric conversion device. Background technique [0002] Thermoelectric materials can realize mutual conversion of heat and electricity through the thermoelectric (Seebeck) effect. Temperature difference power generation has the advantages of compact structure, reliable performance, no noise, no leakage, and flexible movement during operation. It can generate electric potential when there is a small temperature difference. It is widely used in military and civilian fields such as military batteries, remote space probes, and microelectronics. It has important application prospects. Currently commonly used thermoelectric conversion devices are semiconductor materials with excellent performance, such as bismuth telluride, lead telluride, germanium-silicon alloy and selenium compounds, etc., which are composed of many materials ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/28H01L35/32H01L35/22
CPCH10N10/10H10N10/855H10N10/17
Inventor 刘静赵晓冲刘柯钊胡殷龙重朱康伟刘毅杨瑞龙
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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