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Diode type uncooled infrared detector and preparation method thereof

An uncooled infrared detector technology, applied in the field of infrared detectors, can solve the problem of large pixel size, achieve the effect of reducing excessive size and solving low non-uniformity

Active Publication Date: 2018-07-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, compared with the cooled infrared focal plane array, the pixel size is relatively large

Method used

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  • Diode type uncooled infrared detector and preparation method thereof
  • Diode type uncooled infrared detector and preparation method thereof
  • Diode type uncooled infrared detector and preparation method thereof

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preparation example Construction

[0052] Figure 4 to Figure 13 It is a structural flowchart of a method for preparing a diode-type uncooled infrared detector according to an embodiment of the present invention, wherein Figure 14 to Figure 16 It is a flowchart of the method for preparing a diode-type uncooled infrared detector according to an embodiment of the present invention, such as Figure 4 ~ Figure 16 shown, which includes the following steps:

[0053] A: Preparation of uncooled infrared detector device part.

[0054] Using SOI silicon wafers or silicon wafer redox, such as Figure 4 As shown, the silicon wafer vertically forms a three-layer structure, the bottom silicon layer, the buried oxide layer and the top silicon layer. A PN junction is made on the top silicon layer to form a serial infrared detection unit structure; each infrared detection unit is formed after the electrical connection wiring is formed. passivation layer. Include the following sub-steps:

[0055] A1: Use SOI silicon wafer ...

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Abstract

The invention discloses a diode type uncooled infrared detector which comprises two parts: an uncooled infrared detector device part and an uncooled infrared detector readout circuit part. The uncooled infrared detector device part comprises an infrared absorption layer, an infrared heat-sensitive area, an adiabatic suspension structure and an electrical connection line part. The invention furtherdiscloses a preparation method of the diode type uncooled infrared detector, including the following steps: A, preparing an uncooled infrared detector device; and B, inverting the uncooled infrared detector device, and bonding the uncooled infrared detector device with an uncooled infrared detector readout circuit part. Through bonding, the large size of the existing uncooled infrared detector system is greatly reduced, and the problem that the non-uniformity of an uncooled infrared detector with conventional monocrystalline silicon PN junction temperature characteristic in the preparation process is too low is solved.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a diode-type uncooled infrared detector and a preparation method thereof. Background technique [0002] Any object above absolute zero produces infrared radiation. By capturing and detecting these radiant energy, the signals from the detector can be rearranged to form a thermal image with the same radiation distribution as the scene, and the radiation fluctuations and characteristics of each part of the scene can be reproduced. At present, the development of various infrared detection technologies has reached a certain level, and has extremely wide applications in the fields of military, industry, medical treatment, scientific research and special tasks. [0003] The development of the detector, from the unit to the multi-line array, from the multi-line array to the focal plane array. At present, infrared focal plane arrays are mainly divided into two types: cooled t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/10
CPCG01J5/10G01J2005/106
Inventor 薛惠琼陈大鹏刘瑞文王玮冰傅建宇贾云丛候影
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI