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LED chip and preparation method thereof

A technology of LED chip and deposition method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve good adhesion, good thermal stability, and improved luminous performance

Inactive Publication Date: 2018-07-10
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the ohmic contact problem between the N electrode and the N-type epitaxial layer in the LED chip, the present invention provides an LED chip and a preparation method thereof, improves its process stability and transferability, and improves the luminous performance of the LED chip

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  • LED chip and preparation method thereof
  • LED chip and preparation method thereof
  • LED chip and preparation method thereof

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preparation example Construction

[0037] The core idea of ​​the present invention is that the present invention provides a method for preparing an LED chip, such as figure 1 Shown, described preparation method comprises the following steps:

[0038] Step S1, providing an LED epitaxial structure, the LED epitaxial structure includes a substrate; an N-type epitaxial layer, a quantum well layer, and a P-type epitaxial layer are sequentially formed on the substrate from bottom to top;

[0039] Step S2, forming a P electrode layer, forming the P electrode layer on the P-type epitaxial layer;

[0040] Step S3, providing a substrate, and bonding the substrate to the P electrode layer;

[0041] Step S4, removing the substrate and exposing the N-type epitaxial layer;

[0042] Step S5, forming a transparent conductive layer, forming the transparent conductive layer on the N-type epitaxial layer;

[0043] Step S6, forming an N electrode, and forming the N electrode on the transparent conductive layer.

[0044] Corres...

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Abstract

The invention discloses an LED chip and a preparation method thereof. The preparation method comprises forming a transparent conductive layer on an N-type epitaxial layer of an LED epitaxial structurebefore forming an N electrode, the transparent conductive layer and the N-type epitaxial layer form ohmic contact directly, so that the stability and transferability of the N electrode process of theLED chip are improved, and the illuminating distribution of the LED chip is more uniform, so that the illuminating performance of the LED chip is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor light emitting, in particular to an LED chip and a preparation method thereof. Background technique [0002] With the continuous development of light-emitting diode (Light Emitting Diode, referred to as LED) technology, LED chips have traditional front-mounted structures, flip-chip structures, and vertical structures. Because vertical-structured LED chips have good heat dissipation, can carry large currents, and have high luminous intensity , low power consumption, long life and other advantages, are widely used in general lighting, landscape lighting, special lighting, automotive lighting and other fields. [0003] However, the ohmic contact between the N electrode and the N-type epitaxial layer is one of the key technologies in the vertical structure LED chip. The difficulty lies in the difficulty of forming ohmic contact with different epitaxial structures, and it is difficult to control the impact...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42
CPCH01L33/42H01L2933/0016
Inventor 童玲
Owner ENRAYTEK OPTOELECTRONICS
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