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Vertical type light emitting diode

A light-emitting diode, vertical technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of vertical light-emitting diode current distribution, the reliability of light-emitting distribution needs to be improved, etc., and achieve the effect of uniform light-emitting distribution

Pending Publication Date: 2018-02-06
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the current distribution, luminous distribution, and reliability of the existing vertical light-emitting diodes still need to be improved.

Method used

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  • Vertical type light emitting diode
  • Vertical type light emitting diode
  • Vertical type light emitting diode

Examples

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no. 1 example

[0027] combine Figure 1 to Figure 2 As shown, this embodiment provides a vertical light emitting diode, which includes a stacked layer D, a first trench 43, a first insulating layer 5, a conductive plug 8, a bonding metal layer 6, a conductive substrate 7, and an N electrode 70 . The second trench 44 and the P electrode 9 . exist figure 1 In , since the conductive plug 8 and the P electrode 9 are blocked, they are indicated by dotted lines. in:

[0028] The stacked layer D includes an N-type semiconductor layer 1 , a quantum well layer 2 , a P-type semiconductor layer 3 and a conductive layer 4 which are sequentially stacked along the thickness direction X. The conductive layer 4 is electrically connected to the P-type semiconductor layer 3 .

[0029] There are several first grooves 43 distributed at intervals. The first trench 43 is located in the stacked layer D. The first trench 43 penetrates the conductive layer 4 , the P-type semiconductor layer 3 , and the quantum w...

no. 2 example

[0055] One of the differences between the second embodiment and the first embodiment is that in the second embodiment, as image 3 As shown, the ohmic contact layer 40 and the metal reflective layer 41 are provided with an opening 46 at a position corresponding to the second groove 44 in the thickness direction X, and a part of the metal protection layer 42 is filled in the opening 46, and is electrically connected to the P electrode 9. . In other words, the P electrode 9 is electrically connected to the ohmic contact layer 40 and the metal reflective layer 41 through the metal protective layer 42 .

[0056] Furthermore, in this embodiment, the diameter of the opening 46 is larger than the opening width of the second trench 44 at the place corresponding to the P-type semiconductor layer 3, so that the portion of the upper surface of the P-type semiconductor layer 3 close to the second trench 44 Not covered by the ohmic contact layer 40 and the metal reflective layer 41, preve...

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Abstract

Provided is a vertical type light emitting diode. The vertical type light emitting diode includes a stacking layer comprising an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, and a conducting layer electrically connected with the P-type semiconductor layer; a plurality of first grooves distributed at intervals, located in the stacking layer, and exposing the N-type semiconductor layer; a first insulating layer covering the conducting layer and sidewalls of the first grooves; conductive plugs located in the first grooves and electrically connected with the N-type semiconductor layer; a conductive substrate covering the first insulating layer and the conductive plugs and electrically connected with the conductive plugs; an N electrode electrically connectedwith the conductive substrate; a second groove located in the stacking layer, at least penetrating through the N-type semiconductor layer, the quantum well layer, and the P-type semiconductor layer insequence along the thickness direction, and exposing the conducting layer; and a P electrode located in the second groove and electrically connected with the conducting layer. According to the lightemitting diode, the current in the diode is uniformly distributed, the light-emitting distribution is uniform, and the reliability is high.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a vertical light emitting diode. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor light-emitting device with low energy consumption, long life, good stability, fast response, and stable light-emitting wavelength. , Lights and other fields have a wide range of applications. [0003] Existing light-emitting diodes can be divided into three types: front-mount type, flip-chip type, and vertical type. Among them, vertical type light-emitting diodes have the advantages of good heat dissipation, ability to carry large currents, high luminous intensity, low power consumption, and long life. Therefore, it is widely used. [0004] However, the current distribution, luminous distribution, and reliability of the existing vertical light-emitting diodes still need to be improved. Contents of the invention [0005] The problem solved by th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/22
CPCH01L33/06H01L33/22
Inventor 朱秀山童玲徐慧文
Owner ENRAYTEK OPTOELECTRONICS
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