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A large-size sic single crystal growth device and its working method

The technology of a growth device and working method, which is applied in the field of large-size SiC single crystal growth devices, can solve the problems of convex crystal growth interface, unfavorable crystal quality, large temperature difference, etc., achieve fast heating rate, improve crystal growth morphology, reduce Effect of Small Radial Temperature Gradients

Active Publication Date: 2020-10-16
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The radial temperature gradient that can be achieved by single-frequency induction heating is generally stable at 3-4K / cm, but for large-size SiC crystal growth devices, due to the increase in size, the original radial temperature gradient will make the crystal The temperature difference from the center to the edge of the crystal is larger, resulting in a more convex crystal growth interface, which is not conducive to the improvement of crystal quality

Method used

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  • A large-size sic single crystal growth device and its working method
  • A large-size sic single crystal growth device and its working method

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Such as figure 1 shown.

[0034] A large-size SiC single crystal growth device, including a crucible, a quartz tube 11 and an induction coil 9 arranged sequentially from the inside to the outside; the crucible includes a crucible cover 2, a crucible wall 10 and a crucible bottom 6; the upper and lower sides of the crucible An upper temperature measuring hole 1 and a lower temperature measuring hole 7 are respectively arranged on the side; the crucible cover 2, crucible wall 10 and crucible bottom 6 enclose a growth chamber. The induction coil 9 is parallel to the crucible wall 10, and the central axis of the induction coil 9 coincides with the central axis of the crucible.

[0035] A heat insulating material is arranged between the crucible and the quartz tube 11; the upper temperature measuring hole 1 is arranged in the heat insulating material on the upper side of the crucible; the lower temperature measuring hole 7 is arranged in the crucible inside the insulation ...

Embodiment 2

[0039] Such as figure 2 shown.

[0040] A working method of the large-scale SiC single crystal growth device as described in Embodiment 1, comprising the following steps:

[0041] 1) The growth chamber is heated by using a constant frequency and constant intensity current heating mode; the ranges of the constant frequency and constant intensity of the current are 10 kHz and 200 A, respectively.

[0042] 2) During the operation of the current heating mode with constant frequency and constant intensity, the temperature T in the growth chamber is detected through the upper temperature measuring hole until the temperature T in the growth chamber reaches the set temperature; the set temperature is 2373K.

[0043] 3) Take the constant frequency in step 1) as the center frequency f o Carry out multi-frequency heating; adjust the heating current intensity;

[0044] The adjustment process of heating current frequency is:

[0045] to the center frequency f o The high-frequency and...

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Abstract

The invention relates to a large-size SiC single crystal growth device and a working method thereof. By means of the heating mode of the large-size SiC single crystal growth device, compared with a traditional single-frequency heating mode, on the premise of keeping a simple heating structure, higher heat efficiency and high heating speed, the radial temperature gradient of the crystal growth surface in the crystal growth device can also be effectively reduced, thus the crystal growth form is changed, the crystal quality is improved, and heating requirements of the large-size SiC single crystal growth device can be effectively met.

Description

technical field [0001] The invention relates to a large-size SiC single crystal growth device and a working method thereof, belonging to the technical field of crystal growth devices. Background technique [0002] As a typical representative of the third-generation semiconductor material, SiC crystal has a wide band gap, high critical breakdown field strength (10 times that of Si), high thermal conductivity (3.3 times that of Si), and high carrier saturation mobility (is 2.5 times that of Si), high bonding energy and other advantages, it is very suitable for high frequency, high power, radiation resistance, corrosion resistance, high temperature resistance and other applications, and has a wide range of application scenarios. [0003] The currently widely used SiC crystal growth technology is the physical vapor transport (physical vapor transport, PVT) method, or the modified Lely method (modified sublimation process, MSP). The principle of physical gas phase transport is: ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/06
CPCC30B23/06C30B29/36
Inventor 李康张兆星
Owner SHANDONG UNIV
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