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Bipolar silicon-on-insulator transistor with increased breakdown voltage

A technology of silicon transistors and pole insulation, applied in transistors, electric solid-state devices, circuits, etc., can solve problems such as soft collector breakdown, punch-through, and lowering the maximum voltage of transistors

Inactive Publication Date: 2002-04-17
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

thus reducing the highest voltage possible for the transistor
Also, soft collector breakdown or punch through sometimes occurs just before potential locking occurs for increasing collector bias

Method used

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  • Bipolar silicon-on-insulator transistor with increased breakdown voltage
  • Bipolar silicon-on-insulator transistor with increased breakdown voltage
  • Bipolar silicon-on-insulator transistor with increased breakdown voltage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] figure 1 Shown is a first embodiment of a bipolar silicon-on-insulator (SOI) npn transistor according to the invention. Doping the opposite polarity, the invention also applies to pnp transistors.

[0013] The transistor comprises a silicon substrate 1, on the main surface of which is an insulating layer 2 of silicon dioxide.

[0014] A silicon layer 3 lightly doped with impurities of N conductivity type is formed on the insulating oxide layer 2 .

[0015] A base region 4 doped with impurities of conductivity type P extends from a free surface of the silicon layer 3 into the silicon layer 3 .

[0016] The emitter region 5 heavily doped with impurities of conductivity type N extends into the base region 4 from the free surface of the base region 4 .

[0017] At a lateral distance from the base region 4 , a collector region 6 heavily doped with impurities of conductivity type N extends from the free surface of the silicon layer 3 into the silicon layer 3 .

[0018] In...

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PUM

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Abstract

In a bipolar silicon-on-insulator transistor comprising a substrate (1) having a major surface, an oxide layer (2) on said major surface, a silicon layer (3) of a first conductivity type on said oxide layer (2), a base region (4) of a second conductivity type extending into said silicon layer (3), an emitter region (5) of said first conductivity type extending into said base region (4), and a collector region (6) of said first conductivity type extending into said silicon layer (3) at a lateral distance from said base region (4), a plug region (8) of said second conductivity type extends into said silicon layer (3) up to said oxide layer (2) on the opposite side of said emitter region (5) relative to said collector region (6), a portion (8') of said plug region (8) extends laterally along the surface of said oxide layer (2) under at least part of the emitter region (5) towards the collector region (6) at a distance from said base region (4), and said plug region is electrically connected to said base region (4).

Description

technical field [0001] The invention relates to a bipolar silicon-on-insulator transistor comprising a substrate having a main surface, an oxide layer on said main surface, a silicon layer of a first conductivity type on said oxide layer, extending into said silicon layer having A base region of a second conductivity type extending into the base region, an emitter region of the first conductivity type, and extending a lateral distance from the base region into the silicon layer, a collector region of the first conductivity type. Background of the invention [0002] Such transistors are seen, for example, in Torkel Arnborg and Andrej Litwin "Analysis of a Novel High-Voltage Bipolar Silicon-on-Insulator Transistor with Fully Depleted Collector" IEEE Transactions on Electron Devices, January 1995, Vol. 42, No. 1 arrive. [0003] In known transistors, the breakdown voltage of npn transistors drops rapidly when the substrate voltage increases compared to the emitter voltage, whi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L29/73H01L29/732
CPCH01L29/7317H01L29/73
Inventor A·利特温T·阿恩博格
Owner INFINEON TECH AG