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A flash memory array and its reference current generation method

A flash memory array and reference current technology, which is applied in the field of memory, can solve problems such as current rise, and achieve the effect of improving speed and precision

Active Publication Date: 2020-12-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For 90nm non-volatile NOR flash cell (NOR flash cell), since the NOR storage unit (cell) is not saturated after being erased, the current will continue to rise, so it cannot be used figure 1 This array structure

Method used

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  • A flash memory array and its reference current generation method
  • A flash memory array and its reference current generation method

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Embodiment Construction

[0028] The implementation of the present invention will be described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0029] figure 2 It is a structural schematic diagram of a preferred embodiment of a flash memory array in the present invention. like figure 2 As shown, a flash memory array of the present invention includes: a reference unit sub-block 10 and four storage unit sub-blocks 20 .

[0030]Wherein, each storage unit sub-block 20 comprises four storage units Cell0(2j), Cell0(2j+1), Cell1(...

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Abstract

The invention discloses a flash memory array and a reference circuit generation method thereof. The flash memory comprises n storage unit sub-blocks and a reference unit sub-block, wherein the n storage unit sub-blocks are used for storing information; the reference unit sub-block comprises n reference storage units; and the n reference storage units are used for generating reference circuit during the reading of each storage unit, and importing a correction control bit FT-RCELL during the operation so as to control the operation of reference unit sub-block. Through separately taking storage units as reference storage units, reference units are not used during the operation of a memory main array, namely, a plurality of storage unit sub-blocks, and the reference units can track changes ofthe storage units, so that the speed and precision of sense amplifiers are improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a flash memory array and a reference current generation method thereof. Background technique [0002] At present, Flash (flash memory) mainly includes two kinds of NOR Flash (NOR flash memory) and NADN Flash (NADN flash memory). NAND Flash does not adopt the random read technology of memory. It reads one block at a time, usually 512 bytes at a time. Flash using this technology is relatively cheap and suitable for storing large capacity data. However, users cannot directly run the code on NAND Flash. Therefore, in addition to using NAND Flash, the development board and system using NAND Flash also have a small NOR Flash to run the startup code; and NOR Flash is based on random read technology. The reading speed is fast and supports byte writing, so it is generally used to store important information such as the operating system, and is often used in small systems such as MCU. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C5/02G11C16/30G11C16/14G11C16/10
CPCG11C5/02G11C16/10G11C16/14G11C16/30
Inventor 胡剑
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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