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GaN-based heterojunction varactor device and epitaxial structure thereof

An epitaxial structure and heterojunction technology, applied in the field of varactors, can solve problems such as poor power characteristics, achieve high breakdown voltage, wide and flexible application design scenarios, and good thermal stability.

Inactive Publication Date: 2018-08-03
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a GaN-based heterojunction varactor device and its epitaxial structure, aiming to solve the problem that the existing frequency doubling device is based on the Schottky contact formed by metal and semiconductor, resulting in poor power characteristics

Method used

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  • GaN-based heterojunction varactor device and epitaxial structure thereof
  • GaN-based heterojunction varactor device and epitaxial structure thereof

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Embodiment 1

[0021] refer to figure 1 , a GaN-based heterojunction varactor device, including a substrate 11, a high-resistance buffer layer 12, a first heavily doped conductive layer 13, a first low-doped layer 14, and a wide bandgap from bottom to top The barrier layer 15, the second low-doped layer 16 and the second heavily-doped conductive layer 17; the first low-doped layer 14, the barrier layer 15 of the wide band gap and the second low-doped layer 16 to form a heterojunction barrier structure; the high-resistance buffer layer 12, the first layer of heavily doped conductive layer 13, the first layer of low-doped layer 14, the barrier layer 15 of a wide band gap, the second layer of low-doped Materials of the impurity layer 16 and the second heavily doped conductive layer 17 are both GaN-based materials.

[0022] The material of the substrate 11 is one of GaN, Si, sapphire and SiC, and the material of the substrate 11 is non-polar, semi-polar or polar. The thickness of the substrate...

Embodiment 2

[0028] refer to figure 1 , an epitaxial structure of a GaN-based heterojunction varactor device, comprising a metal anode 18, a metal cathode 19 and the GaN-based heterojunction varactor device described in Embodiment 1; between the metal anode 18 and the metal cathode 19 There is a groove 20 , and the bottom of the groove 20 is the first heavily doped conductive layer 13 .

[0029] Good ohmic contact is formed between the metal anode 18 and the metal cathode 19 and the second heavily doped conductive layer 17 .

[0030] The metal material of the metal anode 18 is one or more stacks in Ti, Al, Ni, Cr, Pt, Cu, Ag, Au, etc., but not limited to the above metal types; the metal material of the metal cathode 19 is Ti, Al, One or more stacks of Ni, Cr, Pt, Cu, Ag, Au, etc., but not limited to the above metal types. Both the thickness of the metal anode 18 and the thickness of the metal anode 19 are in the range of 50 nm-10 μm.

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Abstract

The invention provides a GaN-based heterojunction varactor device and an epitaxial structure thereof to solve a problem that a conventional frequency doubling device is based on Schottky contact formed by metal and semiconductor and is poor in power characteristics. The GaN-based heterojunction varactor device comprises a substrate made of a GaN-based material, a high-resistance buffer layer, a first heavily-doped conductive layer, a first low-doped layer, a barrier layer of a wide band gap, a second low-doped layer and a second heavily-doped conductive layer. The first low-doped layer, the barrier layer of the wide band gap layer and the second low-doped layer form a heterojunction barrier structure. The epitaxial structure comprises a metal anode, a metal cathode and the GaN-based heterojunction varactor device. A groove exists between the metal anode and the metal cathode. The bottom of the groove is the first heavily-doped conductive layer. The GaN-based heterojunction varactor device is good in power characteristics, cannot limit the output power characteristics of afrequency doubling source, can achieve high power application, and can be used for a high-power input odd frequency doubling circuit.

Description

technical field [0001] The invention relates to the technical field of varactors in terahertz high-frequency devices, in particular to a GaN-based heterojunction varactor device and its epitaxial structure. Background technique [0002] Terahertz waves are defined between 0.1THz and 10THz, between microwave and infrared, and have extremely important academic value and practical significance. The lack of high power, low cost and portable room temperature terahertz source is the most important factor limiting the application of terahertz technology. Conventional frequency doubling devices such as Schottky diodes are mostly based on metal-semiconductor Schottky contacts. This involves multi-step complex processes such as material epitaxy, mesa etching, metal-semiconductor ohmic contact, and metal-semiconductor Schottky contact. However, heterojunction varactors developed with materials such as GaAs, due to their poor power characteristics, limit the output power characteristi...

Claims

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Application Information

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IPC IPC(8): H01L29/92H01L29/417H01L21/329
CPCH01L29/417H01L29/66143H01L29/92
Inventor 曾建平安宁李倩谭为
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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