A kind of hydrogenation method of silicon tetrachloride

A technology of silicon tetrachloride and hydrogen, applied in the direction of silicon halide compounds, chemical instruments and methods, halosilane, etc., can solve problems affecting product quality, increasing impurity base, reducing material purity, etc., to reduce temperature and improve efficiency effect

Active Publication Date: 2019-10-25
ASIA SILICON QINGHAI
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cold hydrogenation method of silicon tetrachloride is an emerging silicon tetrachloride treatment technology. Silicon tetrachloride, hydrogen and metal-grade silicon powder are passed into a large fluidized bed reactor and react at a temperature of about 850K. The main product is trichlorohydrogen. Silicon, dichlorodihydrosilane and polychlorosilane, because metal-grade silicon powder is added to the reaction material, which increases the impurity base during the reaction, so the reaction product contains C, B, P and other impurities that affect the quality of polysilicon. The physical properties of compounds containing such impurities are similar to those of the main product trichlorosilane or the main raw material hydrogen, so it is difficult to remove them from the system, and will cause fluctuations in product quality when the system circulates
[0004] The low boiling point substances in the equipment are easy to volatilize at high temperature, which will pollute the reaction materials and ultimately affect the product quality
The reaction temperature of silicon tetrachloride thermal hydrogenation technology and silicon tetrachloride cold hydrogenation technology exceeds 800K. At this temperature, the reactor furnace wall and reactor internals will volatilize impurities such as B and P, and then pollute the materials. Reduce material purity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of hydrogenation method of silicon tetrachloride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The invention relates to a method for hydrogenating silicon tetrachloride, which comprises introducing silicon tetrachloride and hydrogen gas into a gas discharge reactor filled with electromagnetic field adjustment materials and loaded metal catalysts, and reacting under the action of an electromagnetic field.

Embodiment 2

[0041] A method for hydrogenating silicon tetrachloride, which involves feeding silicon tetrachloride and hydrogen into a sliding arc discharge reactor filled with ferroelectric materials and loaded metal catalysts, and reacting under the action of an electromagnetic field;

[0042] Among them, the volume ratio of the supported metal catalyst to the ferroelectric material is 20:1, and the molar ratio of hydrogen to silicon tetrachloride is 5:1.

Embodiment 3

[0044] A hydrogenation method of silicon tetrachloride, filled with BaTiO 3 and in SiO 2 Silicon tetrachloride and hydrogen are introduced into a dielectric barrier discharge reactor loaded with metal catalysts loaded with iron catalysts, and react under the action of an electromagnetic field;

[0045] Among them, the supported metal catalyst and BaTiO 3 The volume ratio of hydrogen and silicon tetrachloride is 6:1, and the molar ratio of hydrogen and silicon tetrachloride is 25:1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a hydrogenation method for silicon tetrachloride, and belongs to the technical field of polycrystalline silicon production. The hydrogenation method for silicon tetrachloride ischaracterized in that silicon tetrachloride and hydrogen are introduced into a gas discharge reactor filled with an electromagnetic field adjusting material and a supported metal catalyst, and a reaction is performed under the action of the electromagnetic field. The method can improve the low-temperature hydrogenation efficiency of the silicon tetrachloride and reduce the temperature of a reaction system.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a method for hydrogenating silicon tetrachloride. Background technique [0002] Polysilicon is the cornerstone of photovoltaic industry and microelectronics industry, and is an important industrial material. At present, the modified Siemens method is the mainstream method for producing polysilicon, and more than 95% of polysilicon in the world is prepared by the modified Siemens method. According to statistics, when the improved Siemens method is used to produce polysilicon, about 16 tons of silicon tetrachloride will be produced for every ton of polysilicon produced. [0003] Silicon tetrachloride thermal hydrogenation method is the main technology for processing silicon tetrachloride. Silicon tetrachloride and hydrogen are passed into a thermal hydrogenation furnace to react at a temperature of about 1500K to form trichlorosilane. Due to the high energy consumpt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
CPCC01B33/1071
Inventor 张宝顺宗冰肖建忠王体虎陈聪
Owner ASIA SILICON QINGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products