Nitride light emitting diode assembly

A technology of light-emitting diodes and nitrides, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of uncontrollable opening size and defect density, uneven distribution of electronic holes in LED devices, and affecting LED luminous efficiency. Achieve the effects of improving hole injection efficiency, reducing electron migration rate, and improving effective recombination radiation luminous efficiency

Active Publication Date: 2018-08-24
ANHUI SANAN OPTOELECTRONICS CO LTD
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Problems solved by technology

[0003] At present, the stress release layer is composed of InGaN layers and GaN layers stacked alternately periodically. The stress release layer grown at low temperature generally achieves stress release by opening some "V"-shaped defects, but these "V"-shaped defects start from Because there is a lattice mismatch and a large difference in thermal expansion coefficient between

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  • Nitride light emitting diode assembly
  • Nitride light emitting diode assembly
  • Nitride light emitting diode assembly

Examples

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Embodiment 1

[0027] figure 1 It is a schematic cross-sectional view of a nitride light-emitting diode assembly proposed in this embodiment. See attached figure 1 Firstly, a substrate 100 is provided, and the material of the substrate 100 can be sapphire, silicon, silicon carbide, zinc oxide, gallium nitride, aluminum nitride or other materials suitable for crystal epitaxial growth. Next, an N-type doped nitride layer 200 is formed on the upper surface of the substrate 100. The material of the N-type doped nitride layer 200 can be GaN doped with silicon or germanium or tin or lead, and can also contain unintentionally doped GaN layer. In this embodiment, the N-type doped nitride layer 200 has a platform 210 on which a first electrode 220 is formed.

[0028] Before forming the N-type doped nitride, a step of forming a buffer layer 110 on the substrate 100 is also included. The buffer layer 110 can improve the problem of the lattice constant mismatch between the N-type doped nitride layer...

Embodiment 2

[0045] The difference between this embodiment and Embodiment 1 is that the third defect regulating layer 330 has a single-layer structure, which can be a single-layer structure of aluminum-containing ternary nitride, such as an AlGaN single-layer or an InAlN single-layer; it can also be an aluminum-containing quaternary nitride Nitride monolayer structure, such as AlInGaN monolayer.

[0046] See attached Figure 4 A nitride light-emitting diode assembly provided in this embodiment includes a substrate 100, and a buffer layer 110, an N-type doped nitride layer 200, a defect control layer 300, an active layer 400, The electron blocking layer 510 , the P-type doped nitride layer 500 and the P-type ohmic contact layer 520 . The N-type doped nitride layer 200 is provided with a platform 210 , a first electrode 220 is provided on the platform, and a second electrode 530 is located on the P-type ohmic contact layer 520 . The defect control layer 300 includes a first defect control ...

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Abstract

The invention belongs to the field of semiconductor photoelectric devices, and especially relates to a nitride light emitting diode assembly which can control size and density of V-shaped defects. Through arranging a first defect regulating layer, a second defect modulating layer, and a third defect modulating layer in sequence between an N-type layer and an active layer, the nitride light emitting diode assembly regulates problems of anti-static capacity reduction caused by more defects while regulating sizes and density of the V-shaped defects. Through synergistic effect of the three layersof regulating layers, sizes and density of the V-shaped defects are controlled, electron hole injection efficiency is improved, and meanwhile electron transfer rate is reduced and electron leakage isreduced, Efficiency Droop effect of a device is reduced, uniformity of distribution of the electron holes in the active layer is improved, non-radiation recombination radiation of the device is effectively reduced, and illuminating efficiency is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and in particular relates to a nitride light-emitting diode assembly capable of controlling the size and density of "V"-shaped defects. Background technique [0002] Nitride light emitting diode (Light Emitting Diode, referred to as LED in English) is a semiconductor solid light emitting device, which uses a semiconductor PN junction as a light emitting material, which can directly convert electricity into light. The structure of a traditional light emitting diode generally includes: a substrate, and an N-type nitride layer, a stress release layer, an active layer, an electron blocking layer and a P-type nitride layer sequentially located on the substrate. [0003] At present, the stress release layer is composed of InGaN layers and GaN layers stacked alternately periodically. The stress release layer grown at low temperature generally achieves stress release by opening some "V...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/04
CPCH01L33/025H01L33/04H01L33/32H01L33/325H01L33/06
Inventor 蓝永凌林兓兓蔡吉明
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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